SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-20 of 20 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
Adobe PDF(584Kb)  |  Favorite  |  View/Download:1526/365  |  Submit date:2011/07/05
Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 205, 期号: 4, 页码: 607-612
Authors:  Jiang WH;  Xu HZ;  Xu B;  Wu J;  Ye XL;  Liu HY;  Zhou W;  Sun ZZ;  Li YF;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(479Kb)  |  Favorite  |  View/Download:848/244  |  Submit date:2010/08/12
Quantum Dots  Ingaas/ingaalas  Adjusting Layer  Molecular Beam Epitaxy  High Index  Gaas  
Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 210, 期号: 4, 页码: 451-457
Authors:  Liu HY;  Xu B;  Gong Q;  Ding D;  Liu FQ;  Chen YH;  Jiang WH;  Ye XL;  Li YF;  Sun ZZ;  Zhang JF;  Liang JB;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(218Kb)  |  Favorite  |  View/Download:1289/302  |  Submit date:2010/08/12
Inas Quantum Dots  Molecular Beam Epitaxy  Photoluminescence  Line-shape  
The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 1-2, 页码: 360-363
Authors:  Sun ZZ;  Wu J;  Lin F;  Liu FQ;  Chen YH;  Ye XL;  Jiang WH;  Li YF;  Xu B;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(129Kb)  |  Favorite  |  View/Download:1020/233  |  Submit date:2010/08/12
Self-organized Quantum Dots  Inas/in0.53ga0.47as Multilayer  Inp Substrate  Mbe  Molecular-beam-epitaxy  Inas Islands  Growth  Matrix  Gaas  
Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 1-2, 页码: 356-359
Authors:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Wu J;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(236Kb)  |  Favorite  |  View/Download:972/255  |  Submit date:2010/08/12
Rapid Thermal Annealing  Ingaas/gaas  Quantum Dots  Molecular Beam Epitaxy  Luminescence  Fabrication  Gaas(100)  Interface  Laser  Layer  
Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 1-2, 页码: 17-21
Authors:  Li YF;  Liu FQ;  Xu B;  Ye XL;  Ding D;  Sun ZZ;  Jiang WH;  Liu HY;  Zhang YC;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(280Kb)  |  Favorite  |  View/Download:851/238  |  Submit date:2010/08/12
Quantum Dots  Molecular Beam Epitaxy  High Index  Molecular-beam Epitaxy  Strained Islands  Gaas  Organization  Inp(001)  Lasers  Ingaas  Layer  
Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 218, 期号: 2-4, 页码: 451-454
Authors:  Li YF;  Ye XL;  Xu B;  Liu FQ;  Ding D;  Jiang WH;  Sun ZZ;  Zhang YC;  Liu HY;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(134Kb)  |  Favorite  |  View/Download:894/255  |  Submit date:2010/08/12
Quantum Dots  Molecular Beam Epitaxy  Inas/inp  Inp  Islands  Gaas  Matrix  
Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 3, 页码: 199-204
Authors:  Zhang YC;  Huang CJ;  Liu FQ;  Xu B;  Ding D;  Jiang WH;  Li YF;  Ye XL;  Wu J;  Chen YH;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(233Kb)  |  Favorite  |  View/Download:1191/424  |  Submit date:2010/08/12
Quantum Dots  Inas/gaas  Mbe  Photoluminescence  Absorption  Optical-properties  Photoluminescence  Spectroscopy  Ingaas  Laser  
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
Authors:  Zhang YC;  Huang CJ;  Xu B;  Ye XL;  Ding D;  Wang JZ;  Li YF;  Liu F;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(187Kb)  |  Favorite  |  View/Download:969/292  |  Submit date:2010/08/12
Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Electron-phonon Interactions  Temperature-dependence  Semiconductor Nanocrystals  Carrier Transfer  Inas  Gaas  Lasers  Islands  Growth  Gain  
Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400
Authors:  He J;  Xu B;  Wang ZG;  Qu SC;  Liu FQ;  Zhu TW;  Ye XL;  Zhao FA;  Meng XQ;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)  |  Favorite  |  View/Download:1065/309  |  Submit date:2010/08/12
Photoluminescence  Molecular Beam Epitaxy  Nanomaterials  Quantum Dots  Semiconducting Iii-v Materials  1.3 Mu-m  Temperature-dependence  Excited-states  Inxga1-xas  Growth  Lasers  Inp  
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 241, 期号: 3, 页码: 304-308
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Li DB;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(142Kb)  |  Favorite  |  View/Download:899/340  |  Submit date:2010/08/12
Atomic Force Microscopy  Low Dimensional Structures  Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diodes  Temperature-dependence  Threshold Current  Mu-m  Lasers  
Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 3-4, 页码: 432-438
Authors:  Meng XQ;  Xu B;  Jin P;  Ye XL;  Zhang ZY;  Li CM;  Wang ZG;  Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)  |  Favorite  |  View/Download:829/270  |  Submit date:2010/08/12
Low Dimensional Structures  Molecular Beam Epitaxy  Quantum Dots  Semiconducting Iii-v Materials  Photoluminescence  
A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 25-29
Authors:  Zhang ZY;  Meng XQ;  Jin P;  Li CM;  Qu SC;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(195Kb)  |  Favorite  |  View/Download:979/369  |  Submit date:2010/08/12
Atomic Force Microscopy  Low Dimensional Structures  Quantum Dots  Strain  Molecular Beam Epitaxy  Superluminescent Diodes  1.3 Mu-m  High-power  Integrated Absorber  Inas Islands  Spectrum  Window  Layer  Size  
The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 59-63
Authors:  Zhang ZY;  Jin P;  Li CM;  Ye XL;  Meng XQ;  Xu B;  Liu FQ;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(182Kb)  |  Favorite  |  View/Download:1154/327  |  Submit date:2010/08/12
Low Dimensional Structures  Nanostructures  Quantum Dots  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diode  Time-resolved Photoluminescence  
Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 2, 页码: 477-484
Authors:  Liang S;  Zhu HL;  Pan JQ;  Ye XL;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: liangsong@red.semi.ac.cn
Adobe PDF(399Kb)  |  Favorite  |  View/Download:881/293  |  Submit date:2010/04/11
Bimodal Size Distribution  Metalorganic Vapor Phase Epitaxy  Self-assembled Quantum Dots  Indium Arsenide  Phase-epitaxy  Islands  Ingaas  Size  Laser  
Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 494-499
Authors:  Zhao FA;  Chen YH;  Ye XL;  Xu B;  Jin P;  Wu J;  Wang ZG;  Zhang CL;  Zhao, FA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaofa@red.semi.ac.cn
Adobe PDF(369Kb)  |  Favorite  |  View/Download:1136/262  |  Submit date:2010/03/17
Nanostructures  
The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 276, 期号: 1-2, 页码: 77-82
Authors:  Shi GX;  Xu B;  Jin P;  Ye XL;  Wang YL;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
Adobe PDF(291Kb)  |  Favorite  |  View/Download:966/303  |  Submit date:2010/03/17
Optical Properties  
Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 284, 期号: 1-2, 页码: 20-27
Authors:  Lei W;  Chen YH;  Wang YL;  Xu B;  Ye XL;  Zeng YP;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: ahleiwen@red.semi.ac.cn
Adobe PDF(427Kb)  |  Favorite  |  View/Download:1065/294  |  Submit date:2010/03/17
Annealing  
Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 269, 期号: 2-4, 页码: 181-186
Authors:  Shi GX;  Jin P;  Xu B;  Li CM;  Cui CX;  Wang YL;  Ye XL;  Wu J;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
Adobe PDF(286Kb)  |  Favorite  |  View/Download:951/286  |  Submit date:2010/03/09
Photoluminescence  
Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
Authors:  Liang S;  Zhu HL;  Ye XL;  Wang W;  Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: liangsong@red.semi.ac.cn
Adobe PDF(232Kb)  |  Favorite  |  View/Download:1198/316  |  Submit date:2010/03/08
Photoluminescence  Metalorganic Vapor Phase Epitaxy  Self-assembled Quantum Dots  Indium Arsenide