SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
Liu HY; Xu B; Gong Q; Ding D; Liu FQ; Chen YH; Jiang WH; Ye XL; Li YF; Sun ZZ; Zhang JF; Liang JB; Wang ZG; Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2000
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume210Issue:4Pages:451-457
AbstractWe have investigated the temperature and excitation power dependence of photoluminescence properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As quantum wells. The temperature evolutions of the lower-and higher-energy transition in the photoluminescence spectra have been observed. The striking result is that a higher-energy peak appears at 105 K and its relative intensity increases with temperature in the 105-291 K range. We demonstrate that the higher-energy peak corresponds to the excited-state transition involving the bound-electron state of quantum dots and the two-dimensional hole continuum of wetting layer. At higher temperature, the carrier transition associated with the wetting layer dominates the photoluminescence spectra. A thermalization model is given to explain the process of hole thermal transfer between wetting layer and quantum dots. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordInas Quantum Dots Molecular Beam Epitaxy Photoluminescence Line-shape
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12656
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLiu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Liu HY,Xu B,Gong Q,et al. Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers[J]. JOURNAL OF CRYSTAL GROWTH,2000,210(4):451-457.
APA Liu HY.,Xu B.,Gong Q.,Ding D.,Liu FQ.,...&Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2000).Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers.JOURNAL OF CRYSTAL GROWTH,210(4),451-457.
MLA Liu HY,et al."Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers".JOURNAL OF CRYSTAL GROWTH 210.4(2000):451-457.
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