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Self-assembled InAs quantum wires on InP(001) 会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
Authors:  Wu J;  Zeng YP;  Sun ZZ;  Lin F;  Xu B;  Wang ZG;  Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Short-period Superlattices  Vapor-phase Epitaxy  Gaas  Islands  State  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 218, 期号: 2-4, 页码: 203-208
Authors:  Sun ZZ;  Wu J;  Chen YH;  Liu FQ;  Ding D;  Li YF;  Xu B;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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High-index Inp Substrate  In(Ca)As Nanostructures  Mbe  Molecular-beam-epitaxy  Ingaas Quantum Dots  Oriented Gaas  Optical Characterization  Islands  
Self-assembled InAs quantum wires on InP (001) (vol 219, pg 180, 2000) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 4, 页码: 495-495
Authors:  Wu J;  Zeng YP;  Sun ZZ;  Lin F;  Xu B;  Wang ZG;  Wu J,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 210, 期号: 4, 页码: 451-457
Authors:  Liu HY;  Xu B;  Gong Q;  Ding D;  Liu FQ;  Chen YH;  Jiang WH;  Ye XL;  Li YF;  Sun ZZ;  Zhang JF;  Liang JB;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Inas Quantum Dots  Molecular Beam Epitaxy  Photoluminescence  Line-shape  
The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 1-2, 页码: 360-363
Authors:  Sun ZZ;  Wu J;  Lin F;  Liu FQ;  Chen YH;  Ye XL;  Jiang WH;  Li YF;  Xu B;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-organized Quantum Dots  Inas/in0.53ga0.47as Multilayer  Inp Substrate  Mbe  Molecular-beam-epitaxy  Inas Islands  Growth  Matrix  Gaas  
Self-assembled InAs quantum wires on InP(001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 1-2, 页码: 180-183
Authors:  Wu J;  Zeng YP;  Sun ZZ;  Lin F;  Xu B;  Wang ZG;  Wu J,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Inas Quantum Wires  Inp(001)  Short-period Superlattices  Gaas  Epitaxy  Islands  
Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 219, 期号: 1-2, 页码: 17-21
Authors:  Li YF;  Liu FQ;  Xu B;  Ye XL;  Ding D;  Sun ZZ;  Jiang WH;  Liu HY;  Zhang YC;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Quantum Dots  Molecular Beam Epitaxy  High Index  Molecular-beam Epitaxy  Strained Islands  Gaas  Organization  Inp(001)  Lasers  Ingaas  Layer  
Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates 期刊论文
APPLIED SURFACE SCIENCE, 2000, 卷号: 167, 期号: 3-4, 页码: 191-196
Authors:  Li YF;  Ye XL;  Liu FQ;  Xu B;  Ding D;  Jiang WH;  Sun ZZ;  Liu HY;  Zhang YC;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-assembled Quantum Dots  Molecular Beam Epitaxy  High Index  Molecular-beam Epitaxy  Vapor-phase Epitaxy  Quantum Dots  Islands  Inp(001)  Ingaas  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 期刊论文
PHYSICA E, 2000, 卷号: 8, 期号: 2, 页码: 164-169
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers