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Recombination property of nitrogen-acceptor-bound states in ZnO 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 4, 页码: Art.No.046101
Authors:  Yang XD;  Xu ZY;  Sun Z;  Sun BQ;  Ding L;  Wang FZ;  Ye ZZ;  Yang, XD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: young@red.semi.ac.cn
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Molecular-beam Epitaxy  P-type Zno  Optical-properties  Exciton Formation  Photoluminescence  Films  Spectroscopy  Dynamics  Impurity  Energy  
10 Gb/s电吸收调制器的微波封装设计 期刊论文
中国激光, 2005, 卷号: 32, 期号: 11, 页码: 1495-1498
Authors:  刘宇;  谢亮;  袁海庆;  张家宝;  祝宁华;  孙长征;  熊兵;  罗毅
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Size self-scaling effect in stacked InAs/InAlAs nanowire multilayers 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 85, 期号: 21, 页码: 5061-5063
Authors:  Sun ZZ;  Yoon SF;  Wu J;  Wang ZG;  Yoon, SF, Nanyang Technol Univ, Sch Elect & Elect Engn, Nanyang Ave, Singapore 639798, Singapore. 电子邮箱地址: esfyoon@ntu.edu.sg
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Inas Quantum Wires  
High-performance quantum-dot superluminescent diodes 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 卷号: 16, 期号: 1, 页码: 27-29
Authors:  Zhang ZY;  Wang ZG;  Xu B;  Jin P;  Sun ZZ;  Liu FQ;  Zhang, ZY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhangzy@red.semi.ac.cn
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Crystal Growth  
Structural and optical characterization of Zn1-xCdxO thin films deposited by dc reactive magnetron sputtering 期刊论文
CHINESE PHYSICS LETTERS, 2003, 卷号: 20, 期号: 6, 页码: 942-943
Authors:  Ma DW;  Ye ZZ;  Huang JY;  Zhao BH;  Wan SK;  Sun XH;  Wang ZG;  Ma DW,Zhejiang Univ,State Key Lab Silicon Mat,Hangzhou 310027,Peoples R China.
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Phase Epitaxial-growth  Photoluminescent Properties  Spray-pyrolysis  Zno  Mgxzn1-xo  
Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 91, 期号: 9, 页码: 6021-6026
Authors:  Sun ZZ;  Yoon SF;  Wu J;  Wang ZG;  Sun ZZ,Nanyang Technol Univ,Sch Elect & Elect Engn,Nanyang Ave,Singapore 639798,Singapore.
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Molecular-beam Epitaxy  Morphology  Modulations  Surfaces  Inp(001)  Growth  Alloy  Inp  
InP基半导体低维结构材料分子束外延生长、表征及相关器件研究 学位论文
, 北京: 中国科学院半导体研究所, 2000
Authors:  孙中哲
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Self-assembled InAs quantum wires on InP(001) 会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
Authors:  Wu J;  Zeng YP;  Sun ZZ;  Lin F;  Xu B;  Wang ZG;  Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Short-period Superlattices  Vapor-phase Epitaxy  Gaas  Islands  State  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers  
The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 218, 期号: 2-4, 页码: 203-208
Authors:  Sun ZZ;  Wu J;  Chen YH;  Liu FQ;  Ding D;  Li YF;  Xu B;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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High-index Inp Substrate  In(Ca)As Nanostructures  Mbe  Molecular-beam-epitaxy  Ingaas Quantum Dots  Oriented Gaas  Optical Characterization  Islands