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一种生长氧化锌薄膜的装置及方法 专利
专利类型: 发明, 申请日期: 2008-07-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  杨少延;  刘祥林;  赵凤瑷;  焦春美;  董向芸;  张晓沛;  范海波;  魏宏源;  张攀峰;  王占国
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电磁阀 专利
专利类型: 发明, 申请日期: 2007-09-26, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘祥林;  焦春美;  赵风瑷
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A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 2, 页码: 516-518
Authors:  Hu, WG (Hu Wei-Guo);  Liu, XL (Liu Xiang-Lin);  Zhang, PF (Zhang Pan-Feng);  Zhao, FA (Zhao Feng-Ai);  Jiao, CM (Jiao Chun-Mei);  Wei, HY (Wei Hong-Yuan);  Zhang, RQ (Zhang Ri-Qing);  Wu, JJ (Wu Jie-Jun);  Cong, GW (Cong Guang-Wei);  Pan, Y (Pan Yi);  Hu, WG, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址:
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光子晶体垂直腔面发射激光器特性研究 期刊论文
激光杂志, 2007, 卷号: 28, 期号: 1, 页码: 5-7
Authors:  宋倩;  许兴胜;  赵致民;  刘发民;  陈弘达
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原位非接触探测MOCVD石墨温度分布的方法 专利
专利类型: 发明, 申请日期: 2006-10-11, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘祥林;  赵凤瑷;  焦春美
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InN nanoflowers grown by metal organic chemical vapor deposition 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 7, 页码: Art.No.071113
Authors:  Kang TT (Kang Ting-Ting);  Liu X (Liu Xianglin);  Zhang RQ (Zhang Ri Q.);  Hu WG (Hu Wei G.);  Cong G (Cong Guangwei);  Zhao FA (Zhao Feng-Ai);  Zhu Q (Zhu Qinsheng);  Kang, TT, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail:
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Crystal-growth  Nitride  Nanowires  
Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 494-499
Authors:  Zhao FA;  Chen YH;  Ye XL;  Xu B;  Jin P;  Wu J;  Wang ZG;  Zhang CL;  Zhao, FA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots 期刊论文
Authors:  Zhang CL;  Xu B;  Wang ZG;  Jin P;  Zhao FA;  Zhang, CL, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Theoretical investigation on the phase stability of Nd2Fe14B and site preference of V, Cr, Mn, Zr and Nb 期刊论文
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2005, 卷号: 295, 期号: 3, 页码: 219-229
Authors:  Wang HY;  Zhao FA;  Chen NX;  Liu G;  Wang, HY, Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China. 电子邮箱地址:
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Growth of nano-structures on composition-modulated InAlAs surfaces 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 卷号: 16, 期号: 43, 页码: 7603-7610
Authors:  Zhao FA;  Chen YH;  Ye XL;  Jin P;  Xu B;  Wang ZG;  Zhang CL;  Zhao, FA, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing, Peoples R China. 电子邮箱地址:
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Molecular-beam Epitaxy