SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
He J; Xu B; Wang ZG; Qu SC; Liu FQ; Zhu TW; Ye XL; Zhao FA; Meng XQ; He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2002
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume240Issue:3-4Pages:395-400
AbstractA high density of 1.02 x 10(11) cm(-2) of InAs islands with In(0.15)Gao(0.85)As underlying layer has been achieved on GaAs (10 0) substrate by solid source molecular beam epitaxy. Atomic force microscopy and PL spectra show the size evolution of InAs islands. A 1.3 mum photoluminescence (PL) from InAs islands with In(0.15)Gao(0.85)As underlying layer and InGaAs strain-reduced layer has been obtained. Our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (C) 2002 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordPhotoluminescence Molecular Beam Epitaxy Nanomaterials Quantum Dots Semiconducting Iii-v Materials 1.3 Mu-m Temperature-dependence Excited-states Inxga1-xas Growth Lasers Inp
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11886
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorHe J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
He J,Xu B,Wang ZG,et al. Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer[J]. JOURNAL OF CRYSTAL GROWTH,2002,240(3-4):395-400.
APA He J.,Xu B.,Wang ZG.,Qu SC.,Liu FQ.,...&He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2002).Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer.JOURNAL OF CRYSTAL GROWTH,240(3-4),395-400.
MLA He J,et al."Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer".JOURNAL OF CRYSTAL GROWTH 240.3-4(2002):395-400.
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