SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
Jiang WH; Xu HZ; Xu B; Ye XL; Wu J; Ding D; Liang JB; Wang ZG; Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2000
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume212Issue:1-2Pages:356-359
AbstractPostgrowth rapid thermal annealing was performed on InGaAs/GaAs quantum dots grown by molecular beam epitaxy. The blue shift of the emission peak and the narrowing of the luminescence line width are observed at lower annealing temperature. However, when the annealing temperature is increased to 850 degrees C, the emission line width becomes larger. The TEM image of this sample shows that the surface becomes rough, and some large clusters are formed, which is due to the interdiffusion of In, Ga atoms at the InGaAs/GaAs interface and to the strain relaxation. The material is found to degrade dramatically when the annealing temperature is further increased to 900 degrees C, while emission from quantum dots can still be detected, along with the appearance of the emission from excited state. (C) 2000 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordRapid Thermal Annealing Ingaas/gaas Quantum Dots Molecular Beam Epitaxy Luminescence Fabrication Gaas(100) Interface Laser Layer
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12630
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorJiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Jiang WH,Xu HZ,Xu B,et al. Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,212(1-2):356-359.
APA Jiang WH.,Xu HZ.,Xu B.,Ye XL.,Wu J.,...&Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2000).Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,212(1-2),356-359.
MLA Jiang WH,et al."Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 212.1-2(2000):356-359.
Files in This Item:
File Name/Size DocType Version Access License
1386.pdf(236KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Jiang WH]'s Articles
[Xu HZ]'s Articles
[Xu B]'s Articles
Baidu academic
Similar articles in Baidu academic
[Jiang WH]'s Articles
[Xu HZ]'s Articles
[Xu B]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Jiang WH]'s Articles
[Xu HZ]'s Articles
[Xu B]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.