SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A novel application to quantum dot materials to the active region of superluminescent diodes
Zhang ZY; Meng XQ; Jin P; Li CM; Qu SC; Xu B; Ye XL; Wang ZG; Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2002
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume243Issue:1Pages:25-29
AbstractWe have proposed a new superluminescent diodes (SLD) aimed at wide spectrum-quantum dot superluminescent diodes (QD-SLD), which is characterized by the introduction of a self-assembled asymmetric quantum dot pairs active region into conventional SLID structure. We investigated the structure and optical properties of a bilayer sample with different InAs deposition amounts in the first and second layer. We find that the structure of a self-assembled asymmetric quantum dot pairs can operate up to a 150 nm spectral width. In addition, as the first QDs' density can modulate the density of the QDs on the second layer, due to relatively high QDs density of the first layer, we can get the strong PL intensity from a broad range. We think that for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for QW-SLD. (C) 2002 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordAtomic Force Microscopy Low Dimensional Structures Quantum Dots Strain Molecular Beam Epitaxy Superluminescent Diodes 1.3 Mu-m High-power Integrated Absorber Inas Islands Spectrum Window Layer Size
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11778
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Zhang ZY,Meng XQ,Jin P,et al. A novel application to quantum dot materials to the active region of superluminescent diodes[J]. JOURNAL OF CRYSTAL GROWTH,2002,243(1):25-29.
APA Zhang ZY.,Meng XQ.,Jin P.,Li CM.,Qu SC.,...&Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2002).A novel application to quantum dot materials to the active region of superluminescent diodes.JOURNAL OF CRYSTAL GROWTH,243(1),25-29.
MLA Zhang ZY,et al."A novel application to quantum dot materials to the active region of superluminescent diodes".JOURNAL OF CRYSTAL GROWTH 243.1(2002):25-29.
Files in This Item:
File Name/Size DocType Version Access License
1643.pdf(195KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhang ZY]'s Articles
[Meng XQ]'s Articles
[Jin P]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhang ZY]'s Articles
[Meng XQ]'s Articles
[Jin P]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhang ZY]'s Articles
[Meng XQ]'s Articles
[Jin P]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.