SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m
Meng XQ; Xu B; Jin P; Ye XL; Zhang ZY; Li CM; Wang ZG; Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2002
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume243Issue:3-4Pages:432-438
AbstractSelf-organized InAs quantum dots (QDs) have been fabricated by molecular beam epitaxy and characterized by photoluminescence (PL). For both single- and multi-layer QDs, PL intensity of the first excited state is larger than that of the ground state at 15 K. Conversely, at room temperature (RT), PL intensity of the first excited state is smaller than that of the ground state. This result is explained by the phonon bottleneck effect. To the ground state, the PL intensities of the multi-layer QDs are larger than that of the single-layer QDs at 15 K, while the intensities are smaller than that of the single-layer QDs at RT. This is due to the defects in the multi-layer QD samples acting as the nonradiative recombination centers. The inter-diffusion of Ga and In atoms in the growth process of multi-layer QDs results in the PL blueshift of the ground state and broadening of the full-width at half-maximum (FWHM), which can be avoided by decreasing the spacers' growth temperature. At the spacers' growth temperature of 520degreesC, we have prepared the 5-layer QDs which emit near 1.3 mum with a FWHM of 31.7 meV at RT, and 27.9 meV at 77 K. (C) 2002 Published by Elsevier Science B.V.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordLow Dimensional Structures Molecular Beam Epitaxy Quantum Dots Semiconducting Iii-v Materials Photoluminescence
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11804
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorMeng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Meng XQ,Xu B,Jin P,et al. Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m[J]. JOURNAL OF CRYSTAL GROWTH,2002,243(3-4):432-438.
APA Meng XQ.,Xu B.,Jin P.,Ye XL.,Zhang ZY.,...&Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2002).Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m.JOURNAL OF CRYSTAL GROWTH,243(3-4),432-438.
MLA Meng XQ,et al."Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m".JOURNAL OF CRYSTAL GROWTH 243.3-4(2002):432-438.
Files in This Item:
File Name/Size DocType Version Access License
1656.pdf(175KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Meng XQ]'s Articles
[Xu B]'s Articles
[Jin P]'s Articles
Baidu academic
Similar articles in Baidu academic
[Meng XQ]'s Articles
[Xu B]'s Articles
[Jin P]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Meng XQ]'s Articles
[Xu B]'s Articles
[Jin P]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.