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Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
Shi GX; Jin P; Xu B; Li CM; Cui CX; Wang YL; Ye XL; Wu J; Wang ZG; Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
2004
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume269Issue:2-4Pages:181-186
AbstractThe effect of rapid thermal annealing on the InAs quantum dots (QDs) grown by atomic layer molecular beam epitaxy and capped with InGaAs layer has been investigated using transmission electron microscopy and photoluminescence (PL). Different from the previously reported results, no obvious blueshift of the PL emission of QDs is observed until the annealing temperature increases up to 800 degreesC. The size and shape of the QDs annealed at 750 degreesC have hardly changed indicating the relatively weak Ga/In interdiffusion, which is characterized by little blueshift of the PL peak of QDs. The QD size increases largely and a few large clusters can be observed after 800 degreesC RTA, implying the fast interdiffusion and the formation of InGaAs QDs. These results indicate that the delay of the blueshift of the PL peak of QDs is correlated with the abnormal interdiffusion process, which can be explained by two possible reasons: the reduction of excess-As-induced defects and the redistribution of In, Ga atoms around the InAs QDs resulted from the sub-monolayer deposition of InGaAs capping layer. (C) 2004 Elsevier B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordPhotoluminescence
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-03-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/7964
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorShi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
Recommended Citation
GB/T 7714
Shi GX,Jin P,Xu B,et al. Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2004,269(2-4):181-186.
APA Shi GX.,Jin P.,Xu B.,Li CM.,Cui CX.,...&Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn.(2004).Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,269(2-4),181-186.
MLA Shi GX,et al."Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 269.2-4(2004):181-186.
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