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Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077
Authors:  Peng YS (Peng Yin-Sheng);  Ye XL (Ye Xiao-Ling);  Xu B (Xu Bo);  Niu JB (Niu Jie-Bin);  Jia R (Jia Rui);  Wang ZG (Wang Zhan-Guo);  Liang S (Liang Song);  Yang XH (Yang Xiao-Hong);  Peng, YS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: cynthia@semi.ac.cn
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Photonic Crystal Nanocavity  
二维GaAs基光子晶体微腔的制作与光谱特性分析 期刊论文
物理学报, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077
Authors:  彭银生;  叶小玲;  徐波;  牛洁斌;  贾锐;  王占国;  梁松;  杨晓红
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光通信用10Gbit/s Transponder的设计 期刊论文
电子学报, 2007, 卷号: 35, 期号: 2, 页码: 337-340
Authors:  谢亮;  王欣;  黄亨沛;  张家宝;  祝宁华
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10 Gb/s电吸收调制器的微波封装设计 期刊论文
中国激光, 2005, 卷号: 32, 期号: 11, 页码: 1495-1498
Authors:  刘宇;  谢亮;  袁海庆;  张家宝;  祝宁华;  孙长征;  熊兵;  罗毅
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应变自组装InAlAs量子点材料和红光量子点激光器 期刊论文
固体电子学研究与进展, 2002, 卷号: 22, 期号: 2, 页码: 199-201
Authors:  徐波;  刘会贇;  王占国;  韩勤;  钱家骏;  梁基本;  丁鼎;  刘峰奇;  张金福;  张秀兰
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Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
Authors:  Jiang DS;  Liang XG;  Chang K;  Bian LF;  Sun BQ;  Wang JB;  Johnson S;  Zhang Y;  Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
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Lasers  Gain  Gaas  
High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 79, 期号: 18, 页码: 2868-2870
Authors:  Liu HY;  Xu B;  Wei YQ;  Ding D;  Qian JJ;  Han Q;  Liang JB;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Temperature-dependence  
Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 4, 页码: 2048-2050
Authors:  Liu HY;  Xu B;  Qian JJ;  Ye XL;  Han Q;  Ding D;  Liang JB;  Zhong XR;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Laser-diodes  Photoluminescence  Threshold  Emission  
Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 卷号: 19, 期号: 1, 页码: 197-201
Authors:  Jiang WH;  Xu HZ;  Xu B;  Zhou W;  Gong Q;  Ding D;  Liang JB;  Wang ZG;  Jiang WH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Oriented Gaas  Inas Islands  High-index  Surfaces  Temperature  Topography  Strain  Laser  
快速热退火对带有 InGaAs盖层的 InAs/GaAs量子点发光特性的影响(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 6, 页码: 684
Authors:  魏永强;  刘会云;  徐波;  丁鼎;  梁基本;  王占国
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