SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
Zhang ZY; Xu B; Jin P; Meng XQ; Li CM; Ye XL; Li DB; Wang ZG; Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2002
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume241Issue:3Pages:304-308
AbstractWe have investigated the effect of InAlAs/InGaAs cap layer on the optical properties of self-assembled InAs/GaAs quantum dots (QDs). We find that the photoluminescence emission energy, linewidth and the energy separation between the ground and first excited states of InAs QDs depend on the In composition and the thickness of thin InAlAs cap layer. Furthermore, the large energy separation of 103 meV was obtained from InAs/GaAs QDs with emission at 1.35 pm at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordAtomic Force Microscopy Low Dimensional Structures Nanostructures Molecular Beam Epitaxy Semiconducting Iii-v Materials Laser Diodes Temperature-dependence Threshold Current Mu-m Lasers
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11870
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Zhang ZY,Xu B,Jin P,et al. Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots[J]. JOURNAL OF CRYSTAL GROWTH,2002,241(3):304-308.
APA Zhang ZY.,Xu B.,Jin P.,Meng XQ.,Li CM.,...&Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2002).Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots.JOURNAL OF CRYSTAL GROWTH,241(3),304-308.
MLA Zhang ZY,et al."Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots".JOURNAL OF CRYSTAL GROWTH 241.3(2002):304-308.
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