SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
Zhang ZY; Jin P; Li CM; Ye XL; Meng XQ; Xu B; Liu FQ; Wang ZG; Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2003
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume253Issue:1-4Pages:59-63
AbstractWe have studied how the optical properties of InAs self-assembled quantum dots (QDs) grown on GaAs substrate are affected when depositing an InAlAs/InGaAs combination overgrowth layer directly on it by rapid thermal annealing (RTA). The photoluminescence measurement demonstrated that the InAs QDs experiences an abnormal variation during the course of RTA. The model of transformation of InAs-InAlAs-InGaAlAs could be used to well explain the phenomena. (C) 2003 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordLow Dimensional Structures Nanostructures Quantum Dots Molecular Beam Epitaxy Semiconducting Iii-v Materials Laser Diode Time-resolved Photoluminescence
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11544
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Zhang ZY,Jin P,Li CM,et al. The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing[J]. JOURNAL OF CRYSTAL GROWTH,2003,253(1-4):59-63.
APA Zhang ZY.,Jin P.,Li CM.,Ye XL.,Meng XQ.,...&Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2003).The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing.JOURNAL OF CRYSTAL GROWTH,253(1-4),59-63.
MLA Zhang ZY,et al."The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing".JOURNAL OF CRYSTAL GROWTH 253.1-4(2003):59-63.
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