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并行可配置浮点矩阵乘法IP核设计 期刊论文
网络新媒体技术, 2015, 卷号: 4, 期号: 6, 页码: 32-36
Authors:  乔瑞秀;  鲁华祥;  龚国良;  陈刚
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系统设计  Ip 核  浮点数运算  矩阵乘法  
Synthesis and characterization of polythiophene-modified TiO(2) nanotube arrays 期刊论文
BULLETIN OF MATERIALS SCIENCE 卷: 34 期: 6 页: 1173-1177, 2011, 卷号: 34, 期号: 6, 页码: 1173-1177
Authors:  Lan YW (Lan Yuwei);  Zhou LY (Zhou Liya);  Tong ZF (Tong Zhangfa);  Pang Q (Pang Qi);  Wang F (Wang Fan);  Gong FZ (Gong Fuzhong)
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1.3微米高密度量子点结构及其制备方法 专利
专利类型: 发明, 申请日期: 2006-06-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  方志丹;  倪海桥;  韩勤;  龚政;  张石勇;  佟存柱;  彭红玲;  吴东海;  赵欢;  吴荣汉
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Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Authors:  Sun GS (Sun G. S.);  Liu XF (Liu X. F.);  Gong QC (Gong Q. C.);  Wang L (Wang L.);  Zhao WS (Zhao W. S.);  Li JY (Li J. Y.);  Zeng YP (Zeng Y. P.);  Li JM (Li J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: gshsun@red.semi.ac.cn
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4h-sic  Homoepitaxial Layers  Surface Morphological Defect  Optical Microscopy  Silicon-carbide  Dislocations  Films  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
Authors:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
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4h-sic  
背照式GaN/AlGaN p-i-n紫外探测器的制备与性能 期刊论文
激光与红外, 2006, 卷号: 36, 期号: 11, 页码: 1036-1039
Authors:  陈亮;  游达;  汤英文;  乔辉;  陈俊;  赵德刚;  张燕;  李向阳;  龚海梅
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新奇半导体低维结构的自组织生长 期刊论文
物理, 2006, 卷号: 35, 期号: 8, 页码: 654-658
Authors:  牛智川;  黄社松;  龚政;  方志丹;  倪海桥;  孙宝权;  李树深;  夏建白
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掩埋有高反射率布拉格反射镜的基片键合方法 专利
专利类型: 发明, 申请日期: 2005-09-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  毛容伟;  滕学公;  王启明
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硅基高量子效率共振腔增强型探测器及制作方法 专利
专利类型: 发明, 申请日期: 2005-06-08, 公开日期: 2009-06-04, 2009-06-11
Inventors:  毛容伟;  滕学公;  李传波;  左玉华;  罗丽萍;  成步文;  于金中;  王启明
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硅基1.55μm可调谐共振腔窄带光电探测器的研究 期刊论文
光子学报, 2005, 卷号: 34, 期号: 12, 页码: 1783-1787
Authors:  毛容伟;  成步文;  李传波;  左玉华;  滕学公;  罗丽萍;  余金中;  王启明
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