SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
Zhang YC; Huang CJ; Xu B; Ye XL; Ding D; Wang JZ; Li YF; Liu F; Wang ZG; Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2001
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume224Issue:1-2Pages:41-46
AbstractWe have fabricated a new self-assembled quantum dot system where InGaAs dots are formed on InAlAs wetting layer and embedded in GaAs matrix. The low-temperature photoluminescence and atomic force microscopy measurements confirm the realization of the structure. In contrast to traditional InAs/Ga(Al)As quantum dots, the temperature dependence of the photoluminescence of the dots in such a structure exhibits an electronically decoupled feature due to a higher energy level of the wetting layer which keeps the dots more isolated from each other. (C) 2001 Published by Elsevier Science B.V.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordNanostructures Molecular Beam Epitaxy Semiconducting Iii-v Materials Electron-phonon Interactions Temperature-dependence Semiconductor Nanocrystals Carrier Transfer Inas Gaas Lasers Islands Growth Gain
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12240
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Zhang YC,Huang CJ,Xu B,et al. Optical properties of InGaAs quantum dots formed on InAlAs wetting layer[J]. JOURNAL OF CRYSTAL GROWTH,2001,224(1-2):41-46.
APA Zhang YC.,Huang CJ.,Xu B.,Ye XL.,Ding D.,...&Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2001).Optical properties of InGaAs quantum dots formed on InAlAs wetting layer.JOURNAL OF CRYSTAL GROWTH,224(1-2),41-46.
MLA Zhang YC,et al."Optical properties of InGaAs quantum dots formed on InAlAs wetting layer".JOURNAL OF CRYSTAL GROWTH 224.1-2(2001):41-46.
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