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A new way of uniform splitting of the optical power by directional coupling between the photonic crystal waveguides 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 2, 页码: 1014-1019
Authors:  Zhu GX;  Yu TB;  Chen SW;  Shi Z;  Hu SJ;  Lai ZQ;  Liao QH;  Huang YZ;  Liao QH Nanchang Univ Dept Phys Nanchang 330031 Peoples R China. E-mail Address: lqhua@ncu.edu.cn
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Photonic Crystal Waveguide  Directional Coupler  Beam-splitter  Uniform Energy Distribution  
一种实现光子晶体波导定向耦合型多路光均分的新方法 期刊论文
物理学报, 2009, 卷号: 58, 期号: 2, 页码: 1014-1019
Authors:  朱桂新;  于天宝;  陈淑文;  石哲;  胡淑娟;  赖珍荃;  廖清华;  黄永箴
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High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001) 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 12, 页码: Art.No.123104
Authors:  Wang YL;  Jin P;  Ye XL;  Zhang CL;  Shi GX;  Li RY;  Chen YH;  Wang ZG;  Wang, YL, Beijing Tongmei Xtal Technol Co Ltd, Dept Res & Dev, Beijing Tongzhou Ind Dev Zone, Beijing 101113, Peoples R China. E-mail: wangyli@red.semi.ac.cn
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Nanowires  Threshold  Wells  Inp  
Cleaved-edge overgrowth of aligned InAs islands on GaAs(110) 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 11, 页码: 2661-2664
Authors:  Cui CX;  Chen YH;  Zhao C;  Jin P;  Shi GX;  Wang YL;  Xu B;  Wang ZG;  Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Quantum Dots  
The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer 期刊论文
PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, 2005, 卷号: PTS 1-5, 期号: 475-479, 页码: 1791-1794
Authors:  Shi, GX;  Xu, B;  Jin, P;  Ye, XL;  Cui, CX;  Zhang, CL;  Wu, J;  Wang, ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
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Quantum Dots  Strain Buffer Layer  Inas  Photoluminescence  Well  Laser  Layer  
1.3 微米长波长InAs/GaAs自组织量子点材料及激光器研究 学位论文
, 北京: 中国科学院半导体研究所, 2005
Authors:  史桂霞
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The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 276, 期号: 1-2, 页码: 77-82
Authors:  Shi GX;  Xu B;  Jin P;  Ye XL;  Wang YL;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
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Optical Properties  
A novel method for positioning of InAs islands on GaAs(110) 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 卷号: 28, 期号: 4, 页码: 537-544
Authors:  Cui CX;  Chen YH;  Zhang CL;  Jin P;  Shi GX;  Zhao C;  Xu B;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Inas Island  
Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
Authors:  Xu B;  Wang ZG;  Chen YH;  Jin P;  Ye XL;  Liu HY;  Zhang ZY;  Shi GX;  Zhang CL;  Wang YL;  Liu FQ;  Xu, B, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Dots  
Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 269, 期号: 2-4, 页码: 181-186
Authors:  Shi GX;  Jin P;  Xu B;  Li CM;  Cui CX;  Wang YL;  Ye XL;  Wu J;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
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Photoluminescence