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Parameter estimation of the FitzHugh-Nagumo model using noisy measurements for membrane potential 期刊论文
CHAOS, 2012, 卷号: 22, 期号: 2, 页码: 23139
Authors:  Che, YQ;  Geng, LH;  Han, CX;  Cui, SG;  Wang, J
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Kinetic Monte Carlo simulation of semiconductor quantum dot growth 会议论文
Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA, Beijing, PEOPLES R CHINA, JUN 09-11, 2005
Authors:  Zhao C;  Chen YH;  Sun J;  Lei W;  Cui CX;  Yu LK;  Li K;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Monte Carlo Simulation  
在解理面上制作半导体纳米结构的方法 专利
专利类型: 发明, 申请日期: 2006-01-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈涌海;  张春玲;  崔草香;  徐波;  金鹏;  刘峰奇;  王占国
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Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 31, 期号: 1, 页码: 43-47
Authors:  Cui CX;  Chen YH;  Jin P;  Xu B;  Ren YY;  Zhao C;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Patterned Substrate  Gaas  Molecular Beam Epitaxy  Nucleation Positions  Assembled Quantum Dots  Molecular-beam Epitaxy  Ge Islands  Growth  Surface  Arrays  
Selective growth of InAs islands on patterned GaAs (100) substrate 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2006, 卷号: 39, 期号: 5, 页码: 446-453
Authors:  Cui CX;  Chen YH;  Ren YY;  Xu B;  Jin P;  Zhao C;  Wang ZG;  Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: cxcui@red.semi.ac.cn
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Patterned Substrate  Molecular Beam Epitaxy  Quantum Dots  Inas  Gaas  Ingaas  Assembled Quantum Dots  Molecular-beam Epitaxy  Fabrication  
Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate 期刊论文
SOLID STATE COMMUNICATIONS, 2006, 卷号: 137, 期号: 11, 页码: 630-633
Authors:  Zhao C;  Chen YH;  Cui CX;  Xu B;  Yu LK;  Lei W;  Sun J;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: zhao_chang@sohu.com
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Quantum Dot  Molecular Beam Epitaxy  Kinetic Effects  Monte Carlo Simulation  Molecular-beam Epitaxy  Periodic Strain  Nucleation  
Cleaved-edge overgrowth of aligned InAs islands on GaAs(110) 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 11, 页码: 2661-2664
Authors:  Cui CX;  Chen YH;  Zhao C;  Jin P;  Shi GX;  Wang YL;  Xu B;  Wang ZG;  Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Quantum Dots  
Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 8, 页码: 1379-1382
Authors:  Zhang CL;  Wang ZG;  Chen YH;  Cui CX;  Xu B;  Jin P;  Li RY;  Zhang, CL, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Diffusion Length  
The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer 期刊论文
PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, 2005, 卷号: PTS 1-5, 期号: 475-479, 页码: 1791-1794
Authors:  Shi, GX;  Xu, B;  Jin, P;  Ye, XL;  Cui, CX;  Zhang, CL;  Wu, J;  Wang, ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
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Quantum Dots  Strain Buffer Layer  Inas  Photoluminescence  Well  Laser  Layer  
GaAs 基InAs 量子点的可控定位生长研究 学位论文
, 北京: 中国科学院半导体研究所, 2005
Authors:  崔草香
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