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Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2014, 卷号: 9, 页码: 470
Authors:  Sang, L;  Zhu, QS;  Yang, SY;  Liu, GP;  Li, HJ;  Wei, HY;  Jiao, CM;  Liu, SM;  Wang, ZG;  Zhou, XW;  Mao, W;  Hao, Y;  Shen, B
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High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 14, 页码: 141101
Authors:  Wang, HL;  Yu, HY;  Zhou, XL;  Kan, Q;  Yuan, LJ;  Chen, WX;  Wang, W;  Ding, Y;  Pan, JQ
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Ultrabroad stimulated emission from quantum well laser 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 25, 页码: 251101
Authors:  Wang, HL;  Zhou, XL;  Yu, HY;  Mi, JP;  Wang, JQ;  Bian, J;  Ding, Y;  Chen, WX;  Wang, W;  Pan, JQ
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Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes 期刊论文
OPTICS LETTERS, 2014, 卷号: 39, 期号: 2, 页码: 379-382
Authors:  Wei, TB;  Ji, XL;  Wu, K;  Zheng, HY;  Du, CX;  Chen, Y;  Yan, QF;  Zhao, LX;  Zhou, Z;  Wang, JX;  Li, JM
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Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 600
Authors:  Zhang HY (Zhang, Hongyi);  Chen YH (Chen, Yonghai);  Zhou GY (Zhou, Guanyu);  Tang CG (Tang, Chenguang);  Wang ZG (Wang, Zhanguo)
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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
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Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  阎Zhou HY (Zhou Huiying);  Qu SC (Qu Shengchun);  Jin P (Jin Peng);  Xu B (Xu Bo);  Ye XL (Ye Xiaoling);  Liu JP (Liu Junpeng);  Wang ZG (Wang Zhanguo)
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Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Authors:  Jin, L;  Zhou, HY;  Qu, SC;  Wang, ZG;  Jin, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912,A 35,Tsinghua E Rd, Beijing 100083, Peoples R China,jinlan06@semi.ac.cn;  qsc@semi.ac.cn
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Patterned Substrate  Ion implantatIon  Ordered Nanodots  Anodic Aluminum Oxide  Quantum Dots  Islands  Growth  Semiconductors  Nanostructures  Computation  Ingaas  
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size