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Size evolution and optical properties of self-assembled InAs quantum dots on different matrix 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 卷号: 19, 期号: 3, 页码: 292-297
Authors:  He J;  Xu B;  Wang ZG;  Qu SC;  Liu FQ;  Zhu TW;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Self-assembled  Mbe  Quantum Dots  Photoluminescence  1.3 Mu-m  Temperature-dependence  Excited-states  Inxga1-xas  Lasers  Inp  
Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 11, 页码: 8898-8902
Authors:  He J;  Zhang YC;  Xu B;  Wang ZG;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Scanning-tunneling-microscopy  Growth  Islands  Nm  
Structure and photoluminescence study of InGaAs/GaAs quantum dots grown via cycled (InAs)(n)/(GaAs)(n) monolayer deposition 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 卷号: 42, 期号: 3, 页码: 1154-1157
Authors:  He J;  Wang XD;  Xu B;  Wang ZG;  Qu SC;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(196Kb)  |  Favorite  |  View/Download:982/348  |  Submit date:2010/08/12
Mbe  Ingaas/gaas  Quantum Dots  Photoluminescence  Morphology  Mu-m  Well Structures  Gaas  Lasers  Temperature  States  Inp  
Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 247, 期号: 1-2, 页码: 49-54
Authors:  He J;  Zhang YC;  Xu B;  Wang ZG;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(323Kb)  |  Favorite  |  View/Download:900/338  |  Submit date:2010/08/12
Photoluminescence  Molecular Beam Epitaxy  Nanomaterials  Semiconducting Iii-v Materials  Scanning-tunneling-microscopy  Growth  Inp  
Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400
Authors:  He J;  Xu B;  Wang ZG;  Qu SC;  Liu FQ;  Zhu TW;  Ye XL;  Zhao FA;  Meng XQ;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)  |  Favorite  |  View/Download:1036/309  |  Submit date:2010/08/12
Photoluminescence  Molecular Beam Epitaxy  Nanomaterials  Quantum Dots  Semiconducting Iii-v Materials  1.3 Mu-m  Temperature-dependence  Excited-states  Inxga1-xas  Growth  Lasers  Inp