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Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 160
Authors:  Li, LG;  Liu, SM;  Luo, S;  Yang, T;  Wang, LJ;  Liu, FQ;  Ye, XL;  Xu, B;  Wang, ZG
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Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition 期刊论文
EPL, 2012, 卷号: 97, 期号: 3, 页码: 36001
Authors:  Li, LG;  Liu, SM;  Luo, SA;  Yang, T;  Wang, LJ;  Liu, FQ;  Ye, XL;  Xu, B;  Wang, ZG
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Detecting and tuning anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 111, 期号: 4, 页码: 43109
Authors:  Yu, JL;  Chen, YH;  Jiang, CY;  Ye, XL;  Zhang, HY
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Study on properties of the H1 photonic crystal slab cavity using the effective index perturbation method 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 5, 页码: 54202
Authors:  Zhou, WF;  Ye, XL;  Xu, B;  Zhang, SZ;  Wang, ZG
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Effect of rapid thermal annealing on the luminescence of self-assembled In As quantum dots embedded in GaAs-based photonic crystal nanocavities 期刊论文
MICROELECTRONIC ENGINEERING, 2012, 卷号: 93, 页码: 1-4
Authors:  Peng, YS;  Xu, B;  Ye, XL;  Jin, P;  Wang, ZG
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Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 359, 页码: 55-59
Authors:  Li LG (Li, Li-Gong);  Liu SM (Liu, Shu-Man);  Luo S (Luo, Shuai);  Yang T (Yang, Tao);  Wang LJ (Wang, Li-Jun);  Liu JQ (Liu, Jun-Qi);  Liu FQ (Liu, Feng-Qi);  Ye XL (Ye, Xiao-Ling);  Xu B (Xu, Bo);  Wang ZG (Wang, Zhan-Guo)
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有效折射率微扰法研究单缺陷光子晶体平板微腔的性质 期刊论文
物理学报, 2012, 卷号: 61, 期号: 5, 页码: 054202-1-054202-8
Authors:  周文飞,叶小玲,徐波,张世著,王占国
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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
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Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 11, 页码: 116802
Authors:  Li LG (Li Li-Gong);  Liu SM (Liu Shu-Man);  Luo S (Luo Shuai);  Yang T (Yang Tao);  Wang LJ (Wang Li-Jun);  Liu FQ (Liu Feng-Qi);  Ye XL (Ye Xiao-Ling);  Xu B (Xu Bo);  Wang ZG (Wang Zhan-Guo)
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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  阎Zhou HY (Zhou Huiying);  Qu SC (Qu Shengchun);  Jin P (Jin Peng);  Xu B (Xu Bo);  Ye XL (Ye Xiaoling);  Liu JP (Liu Junpeng);  Wang ZG (Wang Zhanguo)
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