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基于磁电传感器阵列的磁成像系统 学位论文
, 北京: 中国科学院研究生院, 2017
Authors:  史伟亮
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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li;  J. Yang;  J. J. Zhu;  Z. S. Liu;  X. J. Li;  W. Liu;  X. Li;  F. Liang;  J. P. Liu;  B. S. Zhang;  H. Yang
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B=MgO Injectors with Different MgO Growth Processes 期刊论文
PHYSICAL REVIEW APPLIED, 2017, 卷号: 8, 页码: 054027
Authors:  P. Barate;  S. H. Liang;  T. T. Zhang;  J. Frougier;  B. Xu;  P. Schieffer;  M. Vidal;  H. Jaffrès;  B. Lépine;  S. Tricot;  F. Cadiz;  T. Garandel;  J. M. George;  T. Amand;  X. Devaux;  M. Hehn;  S. Mangin;  B. Tao;  X. F. Han;  Z. G. Wang;  X. Marie;  Y. Lu;  P. Renucci
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Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  W. Liu;  X. Li;  F. Liang;  S. T. Liu;  L. Q. Zhang;  H. Yang
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Different annealing temperature suitable for different Mg doped P-GaN 期刊论文
Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68
Authors:  S.T. Liu;  J. Yang;  D.G. Zhao;  D.S. Jiang;  F. Liang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  X. Li;  W. Liu;  L.Q. Zhang;  H. Long;  M. Li
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Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  W. Liu;  F. Liang;  X. Li;  S.T. Liu;  L.Q. Zhang;  H. Yang
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Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
Authors:  J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG;  P. CHEN;  J. J. ZHU;  Z. S. LIU;  S. T. LIU;  L. Q. ZHANG;  M. LI
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InP基光发射芯片研制与无源光子器件设计 学位论文
, 北京: 中国科学院研究生院, 2016
Authors:  韩良顺
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宽可调谐dbr激光器  波长可调谐电吸收调制激光器  直调激光器阵列发射芯片  电吸收调制dbr激光器阵列合波发射芯片  Inp基偏振分束器  模式复用/解复用器  
Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  X. Li;  S. T. Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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