SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
Zhang YC; Huang CJ; Liu FQ; Xu B; Ding D; Jiang WH; Li YF; Ye XL; Wu J; Chen YH; Wang ZG; Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
2000
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume219Issue:3Pages:199-204
AbstractIn this work we report the photoluminescence (PL) and interband absorption study of Si-modulation-doped multilayer InAs/GaAs quantum dots grown by molecular beam epitaxy (MBE) on (100) oriented GaAs substrates. Low-temperature PL shows a distinctive double-peak feature. Power-dependent PL and transmission electron microscopy (TEM) confirm that they stem from the ground states emission of islands of bimodal size distribution. Temperature-dependent PL study indicates that the family of small dots is ensemble effect dominated while the family of large dots is likely to be dominated by the intrinsic property of single quantum dots (QDs). The temperature-dependent PL and interband absorption measurements are discussed in terms of thermalized redistribution of the carriers among groups of QDs of different sizes in the ensemble. (C) 2000 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordQuantum Dots Inas/gaas Mbe Photoluminescence Absorption Optical-properties Photoluminescence Spectroscopy Ingaas Laser
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12400
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Zhang YC,Huang CJ,Liu FQ,et al. Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots[J]. JOURNAL OF CRYSTAL GROWTH,2000,219(3):199-204.
APA Zhang YC.,Huang CJ.,Liu FQ.,Xu B.,Ding D.,...&Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China..(2000).Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots.JOURNAL OF CRYSTAL GROWTH,219(3),199-204.
MLA Zhang YC,et al."Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots".JOURNAL OF CRYSTAL GROWTH 219.3(2000):199-204.
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