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用于半导体光放大器的宽增益谱量子点材料结构 专利
专利类型: 发明, 专利号: CN200910081987.3, 公开日期: 2011-08-31
Inventors:  刘王来;  叶小玲;  徐波;  王占国
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一种测量光子晶体孔洞侧壁垂直度的方法 专利
专利类型: 发明, 专利号: CN200910081986.9, 公开日期: 2011-08-31
Inventors:  彭银生;  徐波;  叶小玲;  王占国
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一种调节GaAs基二维光子晶体微腔共振模式的方法 专利
专利类型: 发明, 专利号: CN200910083495.8, 公开日期: 2011-08-31
Inventors:  彭银生;  徐波;  叶小玲;  王占国
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光伏型InAs量子点红外探测器结构 专利
专利类型: 发明, 专利号: CN200910242347.6, 公开日期: 2011-08-31
Inventors:  唐光华;  徐波;  叶小玲;  金鹏;  刘峰奇;  陈涌海;  王占国;  姜立稳;  孔金霞;  孔宁
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二维GaAs基光子晶体微腔的制作与光谱特性分析 期刊论文
物理学报, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077
Authors:  彭银生;  叶小玲;  徐波;  牛洁斌;  贾锐;  王占国;  梁松;  杨晓红
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Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 1, 页码: 012003-1-012003-5
Authors:  Peng Yinsheng;  Ye Xiaoling;  Xu Bo;  Jin Peng;  Niu Jiebin;  Jia Rui;  Wang Zhanguo
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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Spectroscopy  
Different growth mechanisms of bimodal In As/GaAs QDs 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 43, 期号: 1, 页码: 308-311
Authors:  Zhou GY;  Chen YH;  Zhou XL;  Xu B;  Ye XL;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Inas Quantum Dots  Gaas(001)  Relaxation  Transition  Gaas  
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
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Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size  
选择区域生长高质量InGaAsP多量子阱材料 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 5, 页码: 609
Authors:  刘国利;  王圩;  张佰君;  许国阳;  陈娓兮;  叶小玲;  张静媛;  汪孝杰;  朱洪亮
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InGaAs/InGaAsP量子阱激光器材料带隙蓝移研究 期刊论文
北京师范大学学报. 自然科学版, 2001, 卷号: 37, 期号: 2, 页码: 170
Authors:  刘超;  李国辉;  韩德俊;  姬成周;  陈涌海;  叶小玲
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1.08μm InAs/GaAs量子点激光器光学特性研究 期刊论文
功能材料与器件学报, 2000, 卷号: 6, 期号: 3, 页码: 243
Authors:  钱家骏;  叶小玲;  徐波;  韩勤;  陈涌海;  丁鼎;  梁基本;  刘峰奇;  张金福;  张秀兰;  王占国
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(Ga, Mn, As)/GaAs的发光谱 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 1, 页码: 26-29
Authors:  杨君玲;  陈诺夫;  叶小玲;  何宏家
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量子阱平面光学各向异性的偏振差分反射谱研究 期刊论文
固体电子学研究与进展, 2002, 卷号: 22, 期号: 4, 页码: 412-416
Authors:  陈涌海;  叶小玲;  王占国
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GaAs基上的InAs量子环制备 期刊论文
固体电子学研究与进展, 2006, 卷号: 26, 期号: 4, 页码: 432-435
Authors:  李凯;  叶小玲;  金鹏;  王占国
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Mn离子注入InAs/GaAs量子点结构材料的光电性质研究 期刊论文
物理学报, 2007, 卷号: 56, 期号: 8, 页码: 4930-4935
Authors:  胡良均;  陈涌海;  叶小玲;  王占国
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光致发光谱研究自组织InAs双模量子点态填充 期刊论文
光谱学与光谱分析, 2007, 卷号: 27, 期号: 11, 页码: 2178-2181
Authors:  贾国治;  姚江宏;  张春玲;  舒强;  刘如彬;  叶小玲;  王占国
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Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers