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Effect of Electrical Contact on the Performance of Bi2S3 Single Nanowire Photodetectors 期刊论文
CHEMPHYSCHEM, 2014, 卷号: 15, 期号: 12, 页码: 2510-2516
Authors:  Li, RX;  Yang, JH;  Huo, NJ;  Fan, C;  Lu, FY;  Yan, TF;  Wei, ZM;  Li, JB
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III-V 族半导体纳米结构的MOCVD 生长和光学性质研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  李天锋
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: 463
Authors:  Li, TF;  Chen, YH;  Lei, W;  Zhou, XL;  Luo, S;  Hu, YZ;  Wang, LJ;  Yang, T;  Wang, ZG;  Chen, YH (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China,
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Raman-scattering  Semiconducting Nanowires  Optoelectronic Devices  Phosphide Nanowires  Optical Phonons  Silicon  Crystals  Spectra  
Thermal carrier processes in bimodal-sized quantum dots with different lateral coupling strength 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 3, 页码: 31903
Authors:  Zhou XL;  Chen YH;  Li TF;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China, zhouxl06@semi.ac.cn
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Redistribution  
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size  
Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 卷号: 43, 期号: 4, 页码: 869-873
Authors:  Li TF;  Chen YH;  Lei W;  Zhou XL;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Quantum Dots  Light-emission  Wells  Photoluminescence  
双色、微区反射式瞬态光谱测量系统 专利
专利类型: 发明, 公开日期: 2016-09-28
Inventors:  闫腾飞;  牛秉慧;  高海霞;  李杭;  闫炜;  历巧巧;  张新惠
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