SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
选择区域生长高质量InGaAsP多量子阱材料
刘国利; 王圩; 张佰君; 许国阳; 陈娓兮; 叶小玲; 张静媛; 汪孝杰; 朱洪亮
2001
Source Publication半导体学报
Volume22Issue:5Pages:609
Abstract采用LP-MOVPE在SiO_2掩膜的InP衬底上实现了高质量的InGaAsP多量子阱(MQW)的选择区域生长(SAG)。通过改变生长温度和生长压力,MQW的适用范围由C波段扩展至L波段,即MQW的光致发光波长从1546nm延展至1621nm。光致发光(PL)测试表明
metadata_83中科院半导体所国家光电子工艺中心;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金,国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532986
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18689
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘国利,王圩,张佰君,等. 选择区域生长高质量InGaAsP多量子阱材料[J]. 半导体学报,2001,22(5):609.
APA 刘国利.,王圩.,张佰君.,许国阳.,陈娓兮.,...&朱洪亮.(2001).选择区域生长高质量InGaAsP多量子阱材料.半导体学报,22(5),609.
MLA 刘国利,et al."选择区域生长高质量InGaAsP多量子阱材料".半导体学报 22.5(2001):609.
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