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无权访问的条目 学位论文
Authors:  周旭亮
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Site-controlled fabrication of Ga nanodroplets by focused ion beam 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 13, 页码: 133104
Authors:  Xu, XL;  Wu, J;  Wang, XD;  Li, HD;  Zhou, ZH;  Wang, ZMM
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High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 14, 页码: 141101
Authors:  Wang, HL;  Yu, HY;  Zhou, XL;  Kan, Q;  Yuan, LJ;  Chen, WX;  Wang, W;  Ding, Y;  Pan, JQ
Adobe PDF(772Kb)  |  Favorite  |  View/Download:462/92  |  Submit date:2015/03/20
Ultrabroad stimulated emission from quantum well laser 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 25, 页码: 251101
Authors:  Wang, HL;  Zhou, XL;  Yu, HY;  Mi, JP;  Wang, JQ;  Bian, J;  Ding, Y;  Chen, WX;  Wang, W;  Pan, JQ
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Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes 期刊论文
OPTICS LETTERS, 2014, 卷号: 39, 期号: 2, 页码: 379-382
Authors:  Wei, TB;  Ji, XL;  Wu, K;  Zheng, HY;  Du, CX;  Chen, Y;  Yan, QF;  Zhao, LX;  Zhou, Z;  Wang, JX;  Li, JM
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Study on properties of the H1 photonic crystal slab cavity using the effective index perturbation method 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 5, 页码: 54202
Authors:  Zhou, WF;  Ye, XL;  Xu, B;  Zhang, SZ;  Wang, ZG
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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
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Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
低维自组装InAs/GaAs量子点的光学性质研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  周晓龙
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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  阎Zhou HY (Zhou Huiying);  Qu SC (Qu Shengchun);  Jin P (Jin Peng);  Xu B (Xu Bo);  Ye XL (Ye Xiaoling);  Liu JP (Liu Junpeng);  Wang ZG (Wang Zhanguo)
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: 463
Authors:  Li, TF;  Chen, YH;  Lei, W;  Zhou, XL;  Luo, S;  Hu, YZ;  Wang, LJ;  Yang, T;  Wang, ZG;  Chen, YH (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China,
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Raman-scattering  Semiconducting Nanowires  Optoelectronic Devices  Phosphide Nanowires  Optical Phonons  Silicon  Crystals  Spectra