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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Quantitative investigation of intrinsic shear strain and asymmetric interface conditions in semiconductor superlattices
期刊论文
Journal of Applied Physics, 2019, 卷号: 126, 期号: 6, 页码: 065704
Authors:
Yuan Li
;
Fengqi Liu
;
Xiaoling Ye
;
Yu Liu
;
Jiawei Wang
;
Yonghai Chen
Adobe PDF(1458Kb)
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View/Download:18/0
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Submit date:2020/07/31
Cavity-mode calculation of L3 photonic crystal slab using the effective index perturbation method
期刊论文
Optical Review, 2013, 卷号: 20, 期号: 5, 页码: 420-425
Authors:
Shizhu Zhang, Wenfei Zhou, Xiaoling Ye, Bo Xu, Zhanguo Wang
Adobe PDF(1037Kb)
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View/Download:385/104
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Submit date:2014/02/12
Photo-instability of CdSe/ZnS quantum dots in poly(methylmethacrylate) film
期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 24, 页码: 244308 - 244308-5
Authors:
Hongyi Zhang, Yu Liu, Xiaoling Ye and Yonghai Chen
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View/Download:344/97
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Submit date:2014/03/17
Observation of photo darkening in self assembled InGaAs/GaAs quantum dots
期刊论文
JOURNAL OF APPLIED PHYSICS, 2013, 卷号: 113, 期号: 17, 页码: 173508
Authors:
Zhang, Hongyi
;
Chen, Yonghai
;
Zhou, Xiaolong
;
Jia, Yanan
;
Ye, Xiaoling
;
Xu, Bo
;
Wang, Zhanguo
Adobe PDF(1229Kb)
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View/Download:843/206
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Submit date:2013/08/27
有效折射率微扰法研究单缺陷光子晶体平板微腔的性质
期刊论文
物理学报, 2012, 卷号: 61, 期号: 5, 页码: 054202-1-054202-8
Authors:
周文飞,叶小玲,徐波,张世著,王占国
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View/Download:461/117
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Submit date:2013/05/29
Protection effect of a SiO2 layer in Al0.85Ga 0.15As wet oxidation
期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 10, 页码: 102002
Authors:
Zhou, Wenfei
;
Ye, Xiaoling
;
Xu, Bo
;
Zhang, Shizhu
;
Wang, Zhanguo
Adobe PDF(842Kb)
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View/Download:643/147
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Submit date:2013/04/19
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:
Zhou HY
;
Qu SC
;
Jin P
;
Xu B
;
Ye XL
;
Liu JP
;
Wang ZG
;
Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
Adobe PDF(584Kb)
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View/Download:1573/365
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Submit date:2011/07/05
Atom Force Microscopy
Nanostructures
Molecular-beam Epitaxy
Nanomaterials
Semiconducting Gallium Arsenide
Quantum-dots
Anodic Alumina
Arrays
Placement
Inas
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:
阎Zhou HY (Zhou Huiying)
;
Qu SC (Qu Shengchun)
;
Jin P (Jin Peng)
;
Xu B (Xu Bo)
;
Ye XL (Ye Xiaoling)
;
Liu JP (Liu Junpeng)
;
Wang ZG (Wang Zhanguo)
Adobe PDF(584Kb)
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View/Download:2051/490
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Submit date:2011/07/17
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:
Zhou XL
;
Chen YH
;
Zhang HY
;
Zhou GY
;
Li TF
;
Liu JQ
;
Ye XL
;
Xu B
;
Wang ZG
;
Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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View/Download:1596/395
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Submit date:2011/07/05
Inas Islands
Mu-m
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Gaas
Gaas(100)
Substrate
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:
Zhou XL
;
Chen YH
;
Li TF
;
Zhou GY
;
Zhang HY
;
Ye XL
;
Xu B
;
Wang ZG
;
Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
Adobe PDF(2010Kb)
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View/Download:1403/281
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Submit date:2011/07/05
Self-organized Islands
Molecular-beam-epitaxy
Optical-properties
Surfaces
Emission
Density
Size