SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates
Sun ZZ; Liu FQ; Wu J; Ye XL; Ding D; Xu B; Liang JB; Wang ZG; Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
2000
Conference Name50th IUMRS International Conference on Advanced Materials
Source PublicationPHYSICA E, 8 (2)
Pages164-169
Conference DateJUN 13-18, 1999
Conference PlaceBEIJING, PEOPLES R CHINA
Publication PlacePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
PublisherELSEVIER SCIENCE BV
ISSN1386-9477
AbstractIn this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (411)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface. (C) 2000 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
KeywordSelf-assembled Quantum Dots Inp Substrate High Index Mbe In(Ga Molecular-beam-epitaxy Al)as/inAlas/inp Vapor-phase Epitaxy Gaas Islands Photoluminescence Inp(001) Growth Lasers
Funding OrganizationLab Semiconduct Mat Sci.; Inst Semiconduct.; Chinese Acad Sci.
Subject Area半导体材料
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/14971
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorSun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Sun ZZ,Liu FQ,Wu J,et al. Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:164-169.
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