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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:
阎Zhou HY (Zhou Huiying)
;
Qu SC (Qu Shengchun)
;
Jin P (Jin Peng)
;
Xu B (Xu Bo)
;
Ye XL (Ye Xiaoling)
;
Liu JP (Liu Junpeng)
;
Wang ZG (Wang Zhanguo)
Adobe PDF(584Kb)
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浏览/下载:2617/490
  |  
提交时间:2011/07/17
5Gb/s optical logic AND operations using by monolithically integrated photodiode and electroabsorption modulator
会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7717, Brussels, BELGIUM, APR 13-15, 2010
作者:
Zhang YX
;
Zhao LJ
;
Niu B
;
Pan JQ
;
Wang W
Adobe PDF(1781Kb)
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浏览/下载:1686/326
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提交时间:2011/07/14
Morphology and wetting layer properties of InAs/GaAs nanostructures
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
作者:
Zhao C
;
Chen YH
;
Xu B
;
Tang CG
;
Wang ZG
;
Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(334Kb)
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浏览/下载:1964/335
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提交时间:2010/03/09
Molecular-beam Epitaxy
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Chen YH
;
Tang CH
;
Xu B
;
Jin P
;
Wang ZG
;
Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(2531Kb)
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浏览/下载:1470/187
  |  
提交时间:2010/03/09
Inas
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Lei W
;
Chen YH
;
Jin P
;
Xu B
;
Ye XL
;
Wang ZG
;
Huang XQ
;
Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)
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浏览/下载:1545/261
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提交时间:2010/03/29
Lateral Intersubband Photocurrent
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:
Zhao C
;
Chen YH
;
Zhao M
;
Zhang CL
;
Xu B
;
Yu LK
;
Sun J
;
Lei W
;
Wang ZG
;
Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: czhao@semi.ac.cn
Adobe PDF(330Kb)
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浏览/下载:1815/335
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提交时间:2010/03/29
Monte Carlo Simulation
Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires
会议论文
Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES, Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Zeng, XB
;
Liao, XB
;
Dai, ST
;
Wang, B
;
Xu, YY
;
Xiang, XB
;
Hu, ZH
;
Diao, HW
;
Kong, GL
;
Zeng, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(892Kb)
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浏览/下载:1834/241
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提交时间:2010/03/29
Chemical Vapor Deposition Processes
Nanomaterials
Semiconducting Silicon
Visible Photoluminescence
Porous Silicon
Amorphous-silicon
Si
Spectroscopy
Films
Nanostructures
Confinement
Growth
Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Xu B
;
Wang ZG
;
Chen YH
;
Jin P
;
Ye XL
;
Liu HY
;
Zhang ZY
;
Shi GX
;
Zhang CL
;
Wang YL
;
Liu FQ
;
Xu, B, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(556Kb)
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浏览/下载:1477/256
  |  
提交时间:2010/03/29
Dots
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:
Ye XL
;
Chen YH
;
Xu B
;
Zeng YP
;
Wang ZG
;
Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)
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浏览/下载:1725/258
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提交时间:2010/10/29
Short-period Superlattices
Raman-scattering
Quantum-wells
Growth
Roughness
Segregation
Alas/gaas
Alas
Gaas
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Shi GX
;
Xu B
;
Ye XL
;
Jin P
;
Chen YH
;
Wang YL
;
Cui CX
;
Wang ZG
;
Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(869Kb)
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  |  
浏览/下载:1601/273
  |  
提交时间:2010/03/29
1.3 Mu-m