Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices
Xu B; Wang ZG; Chen YH; Jin P; Ye XL; Liu HY; Zhang ZY; Shi GX; Zhang CL; Wang YL; Liu FQ; Xu, B, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
2004
会议名称13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
会议录名称SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials
页码113-118
会议日期SEP 20-25, 2004
会议地点Beijing, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN0-7803-8668-X
部门归属chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.
关键词Dots
学科领域半导体材料
主办者IEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ.
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9916
专题中国科学院半导体研究所(2009年前)
通讯作者Xu, B, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Xu B,Wang ZG,Chen YH,et al. Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:113-118.
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