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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  阎Zhou HY (Zhou Huiying);  Qu SC (Qu Shengchun);  Jin P (Jin Peng);  Xu B (Xu Bo);  Ye XL (Ye Xiaoling);  Liu JP (Liu Junpeng);  Wang ZG (Wang Zhanguo)
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Optical properties of Mn+ doped GaAs 期刊论文
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 卷号: 4, 期号: 6, 页码: 784-787
Authors:  Zhou HY (Zhou Huiying);  Qu SC (Qu Shengchun);  Liao SZ (Liao Shuzhi);  Zhang FS (Zhang Fasheng);  Liu JP (Liu Junpeng);  Wang ZG (Wang Zhanguo)
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Photoluminescence  Ion implantatIon  Manganese  Gaas  Ion-implantation  Semiconductors  Centers  Dots  
以二氧化硅为掩模定位生长量子点的方法 专利
专利类型: 发明, 申请日期: 2008-12-03, 公开日期: 2009-06-04, 2009-06-11
Inventors:  任芸芸;  徐波;  周惠英;  刘明;  李志刚;  王占国
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在半导体衬底上制备有序砷化铟量子点的方法 专利
专利类型: 发明, 申请日期: 2008-08-13, 公开日期: 2009-06-04, 2009-06-11
Inventors:  周慧英;  曲胜春;  金鹏;  徐波;  王赤云;  刘俊朋;  王智杰;  王占国
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在半导体衬底上制备量子环结构的方法 专利
专利类型: 发明, 申请日期: 2008-08-13, 公开日期: 2009-06-04, 2009-06-11
Inventors:  周慧英;  曲胜春;  ;  徐波;  王赤云;  刘俊朋;  王占国
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在半导体衬底上制备均匀有序量子结构的方法 专利
专利类型: 发明, 申请日期: 2008-07-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  周慧英;  曲胜春;  王占国
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利用阳极氧化浴槽制备有序的阳极氧化铝通孔模板的方法 专利
专利类型: 发明, 申请日期: 2007-09-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  周慧英;  曲胜春;  徐波;  张春林;  王占国 
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GaAs基图形衬底上GaAs 和InAs 纳米结构的控位生长 学位论文
, 北京: 中国科学院半导体研究所, 2007
Authors:  周慧英
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Al2O3 : Cr3+ nanotubes synthesized via homogenization precipitation followed by heat treatment 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 卷号: 110, 期号: 32, 页码: 15749-15754
Authors:  Cheng BC (Cheng Baochang);  Qu SC (Qu Shengchun);  Zhou HY (Zhou Huiying);  Wang ZG (Wang Zhanguo);  Cheng, BC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: bcheng@vip.sina.com
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Gallium Nitride Nanotubes  Single-crystalline  Alumina Nanotubes  Alpha-al2o3 Nanowires  Oxide Nanotubes  Route  Films  Nanostructures  Photoluminescence  Temperature