Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
Ye XL; Chen YH; Xu B; Zeng YP; Wang ZG; Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
2004
会议名称10th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10)
会议录名称EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3)
页码297-300
会议日期SEP 29-OCT 02, 2003
会议地点Batz sur Mer, FRANCE
出版地17, AVE DU HOGGAR, PA COURTABOEUF, BP 112, F-91944 LES ULIS CEDEX A, FRANCE
出版者E D P SCIENCES
ISSN1286-0042
部门归属chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH-->1E and 1LH-->1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.
关键词Short-period Superlattices Raman-scattering Quantum-wells Growth Roughness Segregation Alas/gaas Alas Gaas
学科领域半导体材料
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/13589
专题中国科学院半导体研究所(2009年前)
通讯作者Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
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Ye XL,Chen YH,Xu B,et al. Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy[C]. 17, AVE DU HOGGAR, PA COURTABOEUF, BP 112, F-91944 LES ULIS CEDEX A, FRANCE:E D P SCIENCES,2004:297-300.
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