Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires
	Zeng, XB; Liao, XB; Dai, ST; Wang, B; Xu, YY; Xiang, XB; Hu, ZH; Diao, HW; Kong, GL; Zeng, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
	2005
会议名称	ICMAT Symposium on Science and Technologies of Nanomaterials
会议录名称	Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES
页码	23: 137-140
会议日期	DEC 07-12, 2003
会议地点	Singapore, SINGAPORE
出版地	LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	1422-6375
ISBN	0-87849-953-9
部门归属	chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china
摘要	Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm(-1),which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev, 1.42ev, 1.47ev. Possible reason for these is suggested.
关键词	Chemical Vapor Deposition Processes Nanomaterials Semiconducting Silicon Visible Photoluminescence Porous Silicon Amorphous-silicon Si Spectroscopy Films Nanostructures Confinement Growth
学科领域	半导体材料
主办者	NUS, Mat Engn Initiat, Fac Engn.; NUS Nanosci & Nanotechnol Initiat.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10118
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zeng, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zeng, XB,Liao, XB,Dai, ST,et al. Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2005:23: 137-140.

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