SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
Chen YH; Tang CH; Xu B; Jin P; Wang ZG; Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
2008
Conference Name9th International Conference on Solid-State and Integrated-Circuit Technology
Source Publication2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
PagesVOLS 1-4: 673-676
Conference DateOCT 20-23, 2008
Conference PlaceBeijing, PEOPLES R CHINA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN978-1-4244-2185-5
AbstractThe wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS), in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies. It has been found that the segregation coefficient of Indium atoms varies linearly with the InAs amount in WL. In addition, the effect of the growth temperature on the critical thickness for InAs island formation has also been studied. The critical thickness defined by the appearance of InAs dots, which is determined by AFM, shows a complex variation with the growth temperature. However, the critical thickness determined by RDS is almost constant in the range of 510-540 degrees C.
metadata_83[chen, yonghai; tang, chenguang; xu, bo; jin, peng; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordInas
Funding OrganizationIEEE Beijing Sect.; Chinese Inst Elect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid State Circuits Soc.; IEEE Circuites & Syst Soc.; IEEE Hong Kong EDS, SSCS Chapter.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; Elect Div IEEE.; URSI Commiss D.; Inst Elect Engineers Korea.; Assoc Asia Pacific Phys Soc.; Peking Univ, IEEE EDS Student Chapter.
Subject Area半导体材料
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/8274
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorChen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Chen YH,Tang CH,Xu B,et al. Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-4: 673-676.
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