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Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition 期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 10, 页码: 101002
Authors:  Wang JM (Wang, Jiaming);  Xu FJ (Xu, Fujun);  Huang CC (Huang, Chengcheng);  Xu ZY (Xu, Zhengyu);  Zhang X (Zhang, Xia);  Wang Y (Wang, Yan);  Ge WK (Ge, Weikun);  Wang XQ (Wang, Xinqiang);  Yang ZJ (Yang, Zhijian);  Shen B (Shen, Bo);  Li W (Li, Wei);  Wang WY (Wang, Weiying);  Jin P (Jin, Peng)
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Design of a compact polarizing beam splitter based on a photonic crystal ring resonator with a triangular lattice 期刊论文
APPLIED OPTICS, 2010, 卷号: 49, 期号: 11, 页码: 2168-2172
Authors:  Yu TB (Yu Tianbao);  Huang JH (Huang Jiehui);  Liu NH (Liu Nianhua);  Yang JY (Yang Jianyi);  Liao QH (Liao Qinghua);  Jiang XQ (Jiang Xiaoqing);  Yu, TB, Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China. 电子邮箱地址: yutianbao@ncu.edu.cn
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Multimode Interference Coupler  Polarization Splitter  Wave-guide  Proposal  
以原位垂直超晶格为模板定位生长量子线或点的方法 专利
专利类型: 发明, 申请日期: 2007-01-10, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王元立;  吴巨;  金鹏;  叶小玲;  张春玲;  黄秀颀;  陈涌海;  王占国
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Anomalous photoluminescence of InAs quantum dots implanted by Mn ions 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 卷号: 36, 期号: 2, 页码: 221-225
Authors:  Hu LJ;  Chen YH;  Ye XL;  Huang XQ;  Liang LY;  Ding F;  Wang ZG;  Hu, LJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: liangjun_hu@yahoo.com.cn
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Photoluminescence  
磷化铟衬底上制备量子线阵列的方法 专利
专利类型: 发明, 申请日期: 2006-08-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  黄秀颀;  刘峰奇
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多孔磷化铟阻挡层以及多孔磷化铟的腐蚀液及使用方法 专利
专利类型: 发明, 申请日期: 2006-08-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  车晓玲;  刘峰奇;  黄秀颀;  雷文;  刘俊岐;  路秀真
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Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Lei W;  Chen YH;  Jin P;  Xu B;  Ye XL;  Wang ZG;  Huang XQ;  Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Lateral Intersubband Photocurrent  
InP基应变补偿量子线阵列及其织构纳米衍射光栅研究 学位论文
, 北京: 中国科学院半导体研究所, 2006
Authors:  黄秀颀
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Porous InP array-directed assembly of InAs nanostructure 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 26, 页码: Art.No.263107
Authors:  Che XL;  Li L;  Liu FQ;  Huang XQ;  Wang ZG;  Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: fqliu@red.semi.ac.cn
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Beam Epitaxial-growth  Quantum Dots  Radiative Recombination  Patterned Gaas  Surface  States  Ge  
MS/RF CMOS工艺兼容的光电探测器模拟与测试 期刊论文
光电子·激光, 2006, 卷号: 17, 期号: 12, 页码: 1413-1417
Authors:  雷晓荃;  毛陆虹;  陈弘达;  黄家乐
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