SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures
Lei W; Chen YH; Jin P; Xu B; Ye XL; Wang ZG; Huang XQ; Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
2006
Conference Name2nd Asian Conference on Nanoscience and Nanotechnology
Source PublicationInternational Journal of Nanoscience丛书标题: International Journal of Nanoscience Series
PagesVol 5 No 6 5 (6): 729-735
Conference DateNOV 24-27, 2004
Conference PlaceBeijing, PEOPLES R CHINA
Publication PlacePO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE
PublisherWORLD SCIENTIFIC PUBL CO PTE LTD
metadata_83acad sinica, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
AbstractWe present lateral intersubband photocurrent (PC) study on self-assembled InAs/InAIAs/InP(001) nanostructures in normal incidence. With the help of interband excitation, a broad PC signal has been observed in the photon energy range of 150-630 meV arising from the bound-to-continuum intersubband absorption in the InAs nanostructures. The large linewidth of the intersubband PC signal is due to the size inhomogeneity of the nanostructures. With the increase of the interband excitation the intersubband PC signal firstly increases with a redshift of PC peak and reaches its maximum, then decreases with no peak shift. The increase and redshift of the PC signal at low excitation level can be explained by the state filling effect. However, the decrease of PC signal at high excitation level may be due to the change of the mobility and lifetime of the electrons. The intersubband PC signal decreases when the temperature is increased, which can be explained by the decrease of the mobility and lifetime of the electrons and the thermal escape of electrons.
KeywordLateral Intersubband Photocurrent
Subject Area半导体材料
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9814
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Lei W,Chen YH,Jin P,et al. Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures[C]. PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2006:Vol 5 No 6 5 (6): 729-735.
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