Knowledge Management System Of Institute of Semiconductors,CAS
| Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures | |
Lei W; Chen YH; Jin P ; Xu B; Ye XL; Wang ZG; Huang XQ; Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
| |
| 2006 | |
| Conference Name | 2nd Asian Conference on Nanoscience and Nanotechnology |
| Source Publication | International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series |
| Pages | Vol 5 No 6 5 (6): 729-735 |
| Conference Date | NOV 24-27, 2004 |
| Conference Place | Beijing, PEOPLES R CHINA |
| Publication Place | PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE |
| Publisher | WORLD SCIENTIFIC PUBL CO PTE LTD |
| metadata_83 | acad sinica, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
| Abstract | We present lateral intersubband photocurrent (PC) study on self-assembled InAs/InAIAs/InP(001) nanostructures in normal incidence. With the help of interband excitation, a broad PC signal has been observed in the photon energy range of 150-630 meV arising from the bound-to-continuum intersubband absorption in the InAs nanostructures. The large linewidth of the intersubband PC signal is due to the size inhomogeneity of the nanostructures. With the increase of the interband excitation the intersubband PC signal firstly increases with a redshift of PC peak and reaches its maximum, then decreases with no peak shift. The increase and redshift of the PC signal at low excitation level can be explained by the state filling effect. However, the decrease of PC signal at high excitation level may be due to the change of the mobility and lifetime of the electrons. The intersubband PC signal decreases when the temperature is increased, which can be explained by the decrease of the mobility and lifetime of the electrons and the thermal escape of electrons. |
| Keyword | Lateral Intersubband Photocurrent |
| Subject Area | 半导体材料 |
| Indexed By | 其他 |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/9814 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Corresponding Author | Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| Recommended Citation GB/T 7714 | Lei W,Chen YH,Jin P,et al. Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures[C]. PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2006:Vol 5 No 6 5 (6): 729-735. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2258.pdf（340KB） | 限制开放 | -- | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment