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Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing | |
Shi GX; Xu B![]() ![]() ![]() | |
2004 | |
Conference Name | 13th International Conference on Semiconducting and Insulating Materials (SIMC XIII) |
Source Publication | SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials |
Pages | 135-138 |
Conference Date | SEP 20-25, 2004 |
Conference Place | Beijing, PEOPLES R CHINA |
Publication Place | 345 E 47TH ST, NEW YORK, NY 10017 USA |
Publisher | IEEE |
ISBN | 0-7803-8668-X |
metadata_83 | chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
Abstract | The effect of thermal annealing of InAs/GaAs quantum dots (QDs) with emission wavelength at 1.3 mu m have been investigated by photoluminescence (PL) and transmission electron microscopy (TEM measurements. There is a dramatic change in the A spectra when the annealing temperature is raised up to 800 degrees C: an accelerated blushifit of the main emission peak of QDs together with an inhomogeneous broadening of the linewidth. The TEM images shows that the lateral size of normal QDs decreases as the annealing temperature is increased, while the noncoherent islands increase their size and densit. A small fraction of the relative large QDs contain dislocations when the annealing temperature increases up to 800 degrees C. The latter leads to the strong decrease of the PL intensity. |
Keyword | 1.3 Mu-m |
Subject Area | 半导体材料 |
Funding Organization | IEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ. |
Indexed By | 其他 |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/9920 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
Recommended Citation GB/T 7714 | Shi GX,Xu B,Ye XL,et al. Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:135-138. |
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