SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing
Shi GX; Xu B; Ye XL; Jin P; Chen YH; Wang YL; Cui CX; Wang ZG; Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
2004
Conference Name13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
Source PublicationSMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials
Pages135-138
Conference DateSEP 20-25, 2004
Conference PlaceBeijing, PEOPLES R CHINA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN0-7803-8668-X
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
AbstractThe effect of thermal annealing of InAs/GaAs quantum dots (QDs) with emission wavelength at 1.3 mu m have been investigated by photoluminescence (PL) and transmission electron microscopy (TEM measurements. There is a dramatic change in the A spectra when the annealing temperature is raised up to 800 degrees C: an accelerated blushifit of the main emission peak of QDs together with an inhomogeneous broadening of the linewidth. The TEM images shows that the lateral size of normal QDs decreases as the annealing temperature is increased, while the noncoherent islands increase their size and densit. A small fraction of the relative large QDs contain dislocations when the annealing temperature increases up to 800 degrees C. The latter leads to the strong decrease of the PL intensity.
Keyword1.3 Mu-m
Subject Area半导体材料
Funding OrganizationIEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ.
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9920
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorShi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Shi GX,Xu B,Ye XL,et al. Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:135-138.
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