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Morphology and wetting layer properties of InAs/GaAs nanostructures
Zhao C; Chen YH; Xu B; Tang CG; Wang ZG; Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
2009
Conference Name5th International Conference on Semiconductor Quantum Dots
Source PublicationPHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS
PagesVOL 6,NO 4,6 (4): 789-792
Conference DateMAY 11-16, 2008
Conference PlaceGyeongju, SOUTH KOREA
Publication PlacePAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
PublisherWILEY-V C H VERLAG GMBH
ISSN1610-1634
AbstractIn this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated: A morphological evolution with the varying of the indium deposition amount has been, clearly observed. Our results indicate that there, is a critical deposition amount (similar to 1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (similar to 1.4 ML) to form InAs ring, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds similar to 3.3 ML; because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
metadata_83[zhao, chao; chen, yonghai; xu, bo; tang, chenguang; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
KeywordMolecular-beam Epitaxy
Subject Area半导体材料
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/8266
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorChen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Zhao C,Chen YH,Xu B,et al. Morphology and wetting layer properties of InAs/GaAs nanostructures[C]. PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2009:VOL 6,NO 4,6 (4): 789-792.
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