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Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
Authors:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW;  Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Buffer Layer  Substrate  Diodes  Growth  
Design of high brightness cubic-GaN LEDs grown on GaAs substrate 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
Authors:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
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Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction  
无权访问的条目 期刊论文
Authors:  Zhang BS;  Wu M;  Shen XM;  Chen J;  Zhu JJ;  Liu JP;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Zhang BS,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(232Kb)  |  Favorite  |  View/Download:2048/868  |  Submit date:2010/08/12
无权访问的条目 期刊论文
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Shen XM;  Feng G;  Liu JP;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(396Kb)  |  Favorite  |  View/Download:1075/349  |  Submit date:2010/08/12
无权访问的条目 期刊论文
Authors:  Feng G;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(184Kb)  |  Favorite  |  View/Download:1134/441  |  Submit date:2010/08/12
无权访问的条目 期刊论文
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Shen XM;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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GaN/GaAs(001)薄膜的MOCVD生长与结构特性分析 学位论文
, 北京: 中国科学院半导体研究所, 2003
Authors:  沈晓明
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无权访问的条目 期刊论文
Authors:  Shen XM;  Wang YT;  Zheng XH;  Zhang BS;  Chen J;  Feng G;  Yang H;  Shen XM,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(142Kb)  |  Favorite  |  View/Download:1615/625  |  Submit date:2010/08/12
无权访问的条目 期刊论文
Authors:  Shen XM;  Feng G;  Zhang BS;  Duan LH;  Wang YT;  Yang H;  Shen XM,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(256Kb)  |  Favorite  |  View/Download:1081/358  |  Submit date:2010/08/12
无权访问的条目 期刊论文
Authors:  Wang J;  Zhao DA;  Liu ZS;  Feng G;  Zhu JJ;  Shen XM;  Zhang BS;  Yang H;  Wang J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(109Kb)  |  Favorite  |  View/Download:1228/400  |  Submit date:2010/08/12