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Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 11, 页码: Art. No. 114215
Authors:  Zeng C (Zeng Chang);  Zhang SM (Zhang Shu-Ming);  Ji L (Ji Lian);  Wang HB (Wang Huai-Bing);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Cao Q (Cao Qing);  Chong M (Chong Ming);  Duan LH (Duan Li-Hong);  Wang H (Wang Hai);  Shi YS (Shi Yong-Sheng);  Liu SY (Liu Su-Ying);  Yang H (Yang Hui);  Chen LH (Chen Liang-Hui);  Zeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 5, 页码: Art. No. 054204
Authors:  Ji L (Ji Lian);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhang LQ (Zhang Li-Qun);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Duan LH (Duan Li-Hong);  Yang H (Yang Hui);  Ji, L, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jilian@red.semi.ac.cn;  smzhang@red.semi.ac.cn
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Diodes  
Time delay in InGaN multiple quantum well laser diodes at room temperature 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 12, 页码: Article no.124211
Authors:  Jin LA;  Jiang DS;  Zhang ZM;  Liu ZS;  Zeng C;  Zhao DG;  Zhu JJ;  Wang H;  Duan LH;  Yang H;  Jin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. jilian@red.semi.ac.cn
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Ingan  Laser Diode  Delay Effect  Saturable Absorber  Traps  Light Emission  
Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:  Zhang S (Zhang Shuang);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhu JJ (Zhu Jian-Jun);  Zhang SM (Zhang Shu-Ming);  Wang YT (Wang Yu-Tian);  Duan LH (Duan Li-Hong);  Liu WB (Liu Wen-Bao);  Jiang DS (Jiang De-Sheng);  Yang H (Yang Hui);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Gan  
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响 期刊论文
物理学报, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:  张爽;  赵德刚;  刘宗顺;  朱建军;  张书明;  王玉田;  段俐宏;  刘文宝;  江德生;  杨辉
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Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 1, 页码: Art. No. 015108
Authors:  Liu WB;  Zhao DG;  Sun X;  Zhang S;  Jiang DS;  Wang H;  Zhang SM;  Liu ZS;  Zhu JJ;  Wang YT;  Duan LH;  Yang H;  Liu WB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wbliu@semi.ac.cn;  dgzhao@red.semi.ac.cn
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Surface-morphology  Detectors  Growth  
Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 卷号: 23, 期号: 10, 页码: Art. No. 105015
Authors:  Zhang, S;  Zhao, DG;  Jiang, DS;  Liu, WB;  Duan, LH;  Wang, YT;  Zhu, JJ;  Liu, ZS;  Zhang, SM;  Yang, H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Metal Ultraviolet Photodetectors  Uv Detectors  
Photoelectric characteristics of metal/InGaN/GaN heterojunction structure 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 16, 页码: Art. No. 165108
Authors:  Sun, X;  Liu, WB;  Jiang, DS;  Liu, ZS;  Zhang, S;  Wang, LL;  Wang, H;  Zhu, JJ;  Duan, LH;  Wang, YT;  Zhao, DG;  Zhang, SM;  Yang, H;  Sun, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xiansun@semi.ac.cn;  dsjiang@red.semi.ac.cn
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Fundamental-band Gap  In1-xgaxn Alloys  Inn  
Fabrication and optical characterization of GaN-based nanopillar light emitting diodes 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 9, 页码: 3485-3488
Authors:  Zhu, JH;  Zhang, SM;  Sun, X;  Zhao, DG;  Zhu, JJ;  Liu, ZS;  Jiang, DS;  Duan, LH;  Wang, H;  Shi, YS;  Liu, SY;  Yang, H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Inductively-coupled Plasma  Arrays  Nanostructures  Luminescence  Nanorods  
Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283
Authors:  Zhang LQ;  Zhang SM;  Yang H;  Cao Q;  Ji L;  Zhu JJ;  Liu ZS;  Zhao DG;  Jiang DS;  Duan LH;  Wang H;  Shi YS;  Liu SY;  Chen LH;  Liang JW;  Zhang, LQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hyang@red.semi.ac.cn
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