SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD
Chen J; Zhang SM; Zhang BS; Zhu JJ; Shen XM; Feng G; Liu JP; Wang YT; Yang H; Zheng WC; Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
2003
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume256Issue:3-4Pages:248-253
AbstractThe morphological evolution of GaN thin films grown on sapphire by metalorganic chemical vapor deposition was demonstrated to depend strongly on the growth pressure of GaN nucleation layer (NL). For the commonly used two-step growth process, a change in deposition pressure of NL greatly influences the growth mode and morphological evolution of the following GaN epitaxy. By means of atomic force microscopy and scanning electron microscope, it is shown that the initial density and the spacing of nucleation sites on the NL and subsequently the growth mode of FIT GaN epilayer may be directly controlled by tailoring the initial low temperature NL growth pressure. A mode is proposed to explain the TD reduction for NL grown at relatively high reactor pressure. (C) 2003 Elsevier B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; sichuan univ, dept mat sci, chengdu 610064, peoples r china
KeywordIn Situ Laser Reflectometry Lateral Overgrowths Surface Morphology Metalorganic Chemical Vapor Deposition Gan Chemical-vapor-deposition Light-emitting-diodes Sapphire Substrate Nucleation Layers Quality Temperature
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11482
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorChen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Chen J,Zhang SM,Zhang BS,et al. Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD[J]. JOURNAL OF CRYSTAL GROWTH,2003,256(3-4):248-253.
APA Chen J.,Zhang SM.,Zhang BS.,Zhu JJ.,Shen XM.,...&Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China..(2003).Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD.JOURNAL OF CRYSTAL GROWTH,256(3-4),248-253.
MLA Chen J,et al."Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD".JOURNAL OF CRYSTAL GROWTH 256.3-4(2003):248-253.
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