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Cathodoluminescence study of GaN-based film structures 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2008, 卷号: 19, 页码: S58-S63 Suppl. 1
Authors:  Jiang DS;  Jahn U;  Chen J;  Li DY;  Zhang SM;  Zhu JJ;  Zhao DG;  Liu ZS;  Yang H;  Ploog K;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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MOCVD growth of InN using a GaN buffer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2008, 卷号: 43, 期号: 2, 页码: 81-85
Authors:  Wang LL;  Wang H;  Chen J;  Sun X;  Zhu JJ;  Jiang DS;  Yang H;  Liang JW;  Wang, LL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangll@red.semi.ac.cn
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Surface  
Photoluminescence degradation in GaN induced by light enhanced surface oxidation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 102, 期号: 7, 页码: Art.No.076112
Authors:  Liu WB (Liu Wenbao);  Sun X (Sun Xian);  Zhang S (Zhang Shuang);  Chen J (Chen Jun);  Wang H (Wang Hui);  Wang XL (Wang Xiaolan);  Zhao DG (Zhao Degang);  Yang H (Yang Hui);  Liu, WB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wbliu@semi.ac.cn
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Gaas-surfaces  
Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition 期刊论文
MATERIALS LETTERS, 2007, 卷号: 61, 期号: 2, 页码: 516-519
Authors:  Wang H;  Huang Y;  Sun Q;  Chen J;  Zhu JJ;  Wang LL;  Wang YT;  Yang H;  Wu MF;  Qu YH;  Jiang DS;  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@red.semi.ac.cn
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X-ray Diffraction  
Effect of oxidation on the optical and surface properties of AlGaN 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 252, 期号: 24, 页码: 8706-8709
Authors:  Wang XL (Wang X. L.);  Zhao DG (Zhao D. G.);  Chen J (Chen J.);  Li XY (Li X. Y.);  Gong HM (Gong H. M.);  Yang H (Yang H.);  Wang, XL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: WXL@mail.semi.ac.cn
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Oxidation  Algan  Surface Morphology  Ray Photoelectron-spectroscopy  High-power  Gan  Oxide  
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 9, 页码: Art.No.092114
Authors:  Wang H (Wang H.);  Huang Y (Huang Y.);  Sun Q (Sun Q.);  Chen J (Chen J.);  Wang LL (Wang L. L.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Zhang SM (Zhang S. M.);  Jiang DS (Jiang D. S.);  Wang YT (Wang Y. T.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wangh@red.semi.ac.cn
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X-ray-diffraction  Electron-transport  Epitaxial Gan  Band-gap  Dislocations  Sapphire  Aln  
Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 293, 期号: 2, 页码: 269-272
Authors:  Huang Y (Huang Y.);  Wang H (Wang H.);  Sun Q (Sun Q.);  Chen J (Chen J.);  Li DY (Li D. Y.);  Zhang JC (Zhang J. C.);  Wang JF (Wang J. F.);  Wang YT (Wang Y. T.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wangh@red.semi.ac.cn
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Growth Mode  X-ray Diffraction  Metalorganic Chemical Vapor Deposition  Indium Nitride  X-ray-diffraction  Threading Dislocations  Electron-transport  Buffer Layer  Thin-films  Gan Films  Sapphire  Aln  
Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 4, 页码: Art.No.046101
Authors:  Li DY (Li D. Y.);  Huang YZ (Huang Y. Z.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Ye XJ (Ye X. J.);  Chong M (Chong M.);  Chen LH (Chen L. H.);  Yang H (Yang H.);  Liang JW (Liang J. W.);  Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, POB 912, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
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Linewidth Enhancement Factor  Wave-guide Laser  Gan Substrate  Index  Temperature  Gain  
Low-temperature growth of InN by MOCVD and its characterization 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 276, 期号: 1-2, 页码: 13-18
Authors:  Huang Y;  Wang H;  Sun Q;  Chen J;  Li DY;  Wang, YT;  Yang H;  Huang, Y, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhuang@red.semi.ac.cn
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Growth Rate  
Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 12, 页码: Art.No.121914
Authors:  Sun Q;  Huang Y;  Wang H;  Chen J;  Jin RQ;  Zhang SM;  Yang H;  Jiang DS;  Jahn U;  Ploog KH;  Sun, Q, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn
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Chemical-vapor-deposition