SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask
Feng G; Shen XM; Zhu JJ; Zhang BS; Yang H; Liang JW; Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
2003
Conference Name5th International Conference on Nitride Semiconductors (ICNS-5)
Source Publication5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS
Pages2167-2170
Conference DateMAY 25-30, 2003
Conference PlaceNARA, JAPAN
Publication Place605 THIRD AVE, NEW YORK, NY 10158-0012 USA
PublisherWILEY-VCH, INC
ISBN3-527-40489-9
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
AbstractWe proposed a new method to suppress the crystallographic tilt in the lateral epitaxial overgrowth of GaN by using an oxide mask with a newly designed pattern. A rhombus mask with edges oriented in the direction of <10 - 10>(GaN) was used instead of the traditional stripe mask. The morphology evolution during the LEO GaN with the rhombus mask was investigated by SEM, and the crystallographic tilt in the LEO GaN was measured by DC-XRD. It is found that using the new rhombus mask can decrease the crystallographic tilt in the LEO GaN. In addition, this method makes the ELO GaN stripes easy to coalesce. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KeywordBuffer Layer Substrate Diodes Growth
Subject Area光电子学
Funding OrganizationJapan Soc Appl Phys.; Japan Soc Promot Sci, 162nd Comm Wide Bandgap Semiconductor Photon & Elect Devices.; Japan Assoc Crystal Growth.; Elect Soc.
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/13563
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorFeng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Feng G,Shen XM,Zhu JJ,et al. Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask[C]. 605 THIRD AVE, NEW YORK, NY 10158-0012 USA:WILEY-VCH, INC,2003:2167-2170.
Files in This Item:
File Name/Size DocType Version Access License
2765.pdf(92KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Feng G]'s Articles
[Shen XM]'s Articles
[Zhu JJ]'s Articles
Baidu academic
Similar articles in Baidu academic
[Feng G]'s Articles
[Shen XM]'s Articles
[Zhu JJ]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Feng G]'s Articles
[Shen XM]'s Articles
[Zhu JJ]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.