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Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 23, 页码: 232104
Authors:  Shang, ZJ;  Zheng, XH;  Yang, C;  Chen, Y;  Li, B;  Sun, L;  Tang, Z;  Zhao, DG
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含有p-GaN纳米阵列的InGaN/GaN双异质结太阳能电池的制作 期刊论文
科学通报, 2011, 卷号: 56, 期号: 2, 页码: 174-178
Authors:  唐龙娟;  郑新和;  张东炎;  董建荣;  王辉;  杨辉
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Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 13, 页码: Art. No. 132908
Authors:  Zheng XH (Zheng X. H.);  Huang AP (Huang A. P.);  Xiao ZS (Xiao Z. S.);  Yang ZC (Yang Z. C.);  Wang M (Wang M.);  Zhang XW (Zhang X. W.);  Wang WW (Wang W. W.);  Chu PK (Chu Paul K.);  Huang, AP, BeihangUniv, DeptPhys, Beijing 100191, Peoples R China. 电子邮箱地址: aphuang@buaa.edu.cn
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Oxygen  Gate  Diffusion  Films  
Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103
Authors:  Yang ZC (Yang Z. C.);  Huang AP (Huang A. P.);  Zheng XH (Zheng X. H.);  Xiao ZS (Xiao Z. S.);  Liu XY (Liu X. Y.);  Zhang XW (Zhang X. W.);  Chu PK (Chu Paul K.);  Wang WW (Wang W. W.);  Yang, ZC, BeihangUniv, DeptPhys, Beijing 100191, Peoples R China. 电子邮箱地址: aphuang@buaa.edu.cn
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Electron State Density  Fermi-level Pinning (Flp)  Mis Structures  Work Function (Wf)  Work Function  
光子晶体激光器与光子晶体波导耦合输出方法及输出器 专利
专利类型: 发明, 申请日期: 2007-05-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  郑婉华;  马小涛;  任刚;  蔡向华
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一种光子晶体激光耦合输出器 专利
专利类型: 实用新型, 申请日期: 2007-03-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  马小涛;  郑婉华;  任刚;  蔡向华
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Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy 期刊论文
PHYSICAL REVIEW B, 2007, 卷号: 75, 期号: 18, 页码: Art.No.184103
Authors:  Tang CY;  Li FH;  Wang R;  Zou J;  Zheng XH;  Liang JW;  Li, FH, Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. 电子邮箱地址: lifh@aphy.iphy.ac.cn
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Image Deconvolution  
Dipole mode photonic crystal point defect laser on InGaAsP/InP 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 292, 期号: 2, 页码: 341-344
Authors:  Zheng WH;  Ren G;  Ma XT;  Cai XH;  Chen LH;  Nozaki K;  Baba T;  Zheng, WH, Chinese Acad Sci, Inst Semicond, Nano Optoelect Lab, POB 912, Beijing 100083, Peoples R China. E-mail: whzheng@red.semi.ac.cn
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Dipole Mode  
Dipole mode photonic crystal point defect laser on InGaAsP/InP 会议论文
JOURNAL OF CRYSTAL GROWTH, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
Authors:  Zheng WH;  Ren G;  Ma XT;  Cai XH;  Chen LH;  Nozaki K;  Baba T;  Zheng, WH, Chinese Acad Sci, Inst Semicond, Nano Optoelect Lab, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: whzheng@red.semi.ac.cn
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Dipole Mode  
高击穿电压的高电子迁移率晶体管 专利
专利类型: 发明, 申请日期: 2005-12-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  徐晓华;  倪海桥;  牛智川;  贺正宏;  王建林
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