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Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
Authors:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW;  Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Buffer Layer  Substrate  Diodes  Growth  
无权访问的条目 期刊论文
Authors:  Zhang BS;  Wu M;  Shen XM;  Chen J;  Zhu JJ;  Liu JP;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Zhang BS,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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无权访问的条目 期刊论文
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Shen XM;  Feng G;  Liu JP;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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无权访问的条目 期刊论文
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Shen XM;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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无权访问的条目 期刊论文
Authors:  Shen XM;  Wang YT;  Zheng XH;  Zhang BS;  Chen J;  Feng G;  Yang H;  Shen XM,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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无权访问的条目 期刊论文
Authors:  Shen XM;  Feng G;  Zhang BS;  Duan LH;  Wang YT;  Yang H;  Shen XM,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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无权访问的条目 期刊论文
Authors:  Shen XM;  Fu Y;  Feng G;  Zhang BS;  Feng ZH;  Wang YT;  Yang H;  Shen XM,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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