SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique
Feng G; Zhu JJ; Shen XM; Zhang BS; Zhao DG; Wang YT; Yang H; Liang JW; Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
2003
Source PublicationSCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY
ISSN1672-1799
Volume46Issue:4Pages:437-440
AbstractIn this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 mum. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer.
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordGan X-ray Diffraction Thickness Sapphire Growth Films
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11488
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorFeng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Feng G,Zhu JJ,Shen XM,et al. Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique[J]. SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,2003,46(4):437-440.
APA Feng G.,Zhu JJ.,Shen XM.,Zhang BS.,Zhao DG.,...&Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China..(2003).Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique.SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,46(4),437-440.
MLA Feng G,et al."Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique".SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY 46.4(2003):437-440.
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