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Flexible photodetectors with single-crystalline GaTe nanowires 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2014, 卷号: 2, 期号: 30, 页码: 6104-6110
Authors:  Yu, G;  Liu, Z;  Xie, XM;  Ouyang, X;  Shen, GZ
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High-Performance Hybrid Phenyl-C61-Butyric Acid Methyl Ester/Cd3P2 Nanowire Ultraviolet-Visible-Near Infrared Photodetectors 期刊论文
ACS NANO, 2014, 卷号: 8, 期号: 1, 页码: 787-796
Authors:  Chen, G;  Liang, B;  Liu, X;  Liu, Z;  Yu, G;  Xie, XM;  Luo, T;  Chen, D;  Zhu, MQ;  Shen, GZ;  Fan, ZY
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High performance rigid and flexible visible-light photodetectors based on aligned XP nanowire arrays 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2014, 卷号: 2, 期号: 7, 页码: 1270-1277
Authors:  Chen, G;  Liang, B;  Liu, Z;  Yu, G;  Xie, XM;  Luo, T;  Xie, Z;  Chen, D;  Zhu, MQ;  Shen, GZ
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半导体InAs量子点单光子发射器件 期刊论文
物理, 2010, 卷号: 39, 期号: 11, 页码: 737-745
Authors:  牛智川;  孙宝权;  窦秀明;  熊永华;  王海莉;  倪海桥;  李树深;  夏建白
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Space-charge-limited currents in GaN Schottky diodes 期刊论文
SOLID-STATE ELECTRONICS, 2005, 卷号: 49, 期号: 5, 页码: 847-852
Authors:  Shen XM;  Zhao DG;  Liu ZS;  Hu ZF;  Yang H;  Liang JW;  Shen, XM, Tongji Univ, Inst Semicond & Informat Technol, 1239 Siping Rd, Shanghai 200092, Peoples R China. 电子邮箱地址:
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氮化镓肖特基结紫外探测器的异常特性测量 期刊论文
高技术通讯, 2005, 卷号: 15, 期号: 10, 页码: 62-67
Authors:  刘宗顺;  赵德刚;  朱建军;  张书明;  沈晓明;  段俐宏;  杨辉
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Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 270, 期号: 3-4, 页码: 316-321
Authors:  Zhang BS;  Wu M;  Liu JP;  Chen J;  Zhu JJ;  Shen XM;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Boyd AR;  Zhang, BS, Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Weixing Rd 7083, Changchun 130022, Peoples R China. 电子邮箱地址:
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X-ray Diffraction  
Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 260, 期号: 3-4, 页码: 331-335
Authors:  Wu M;  Zhang BS;  Chen J;  Liu JP;  Shen XM;  Zhao DG;  Zhang JC;  Wang JF;  Li N;  Jin RQ;  Zhu JJ;  Yang H;  Wu, M, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Full-width At Half-maximum  
Si(111)衬底无微裂GaN的MOCVD生长 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 4, 页码: 410-414
Authors:  张宝顺;  伍墨;  陈俊;  沈晓明;  冯淦;  刘建平;  史永生;  段丽宏;  朱建军;  杨辉
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Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
Authors:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW;  Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Buffer Layer  Substrate  Diodes  Growth