SEMI OpenIR

Browse/Search Results:  1-2 of 2 Help

Selected(0)Clear Items/Page:    Sort:
Design of high brightness cubic-GaN LEDs grown on GaAs substrate 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
Authors:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(172Kb)  |  Favorite  |  View/Download:919/260  |  Submit date:2010/11/15
Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction  
Design of high brightness cubic-GaN LEDs grown on GaAs substrate 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 卷号: 42, 期号: 0, 页码: S753-S756
Authors:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP,Chinese Acad Sci,State Key Lab Integrated Optoelect,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(1909Kb)  |  Favorite  |  View/Download:783/189  |  Submit date:2010/08/12
Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction