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Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method 期刊论文
JOURNAL OF LUMINESCENCE, 2010, 卷号: 130, 期号: 3, 页码: 411-414
Authors:  Zheng J;  Ding WC;  Xue CL;  Zuo YH;  Cheng BW;  Yu JZ;  Wang QM;  Wang GL;  Guo HQ;  Zheng, J, Chinese Acad Sci, Inst Semicond, Stare Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: zhengjun@semi.ac.cn
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Erbium Silicate  Photoluminescence  Si Photonics  Wave-guide Amplifiers  Crystalline Films  Erbium Silicate  Energy-transfer  Si  Er3++  Excitation  
Strong visible and infrared photoluminescence from Er-implanted silicon nitride films 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 13, 页码: Art. No. 135101
Authors:  Ding WC;  Hu D;  Zheng J;  Chen P;  Cheng BW;  Yu JZ;  Wang QM;  Ding, WC, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: wcd04@semi.ac.cn
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1.54 Mu-m  
缓冲层生长压力对MOCVD GaN性能的影响 期刊论文
中国科学. E辑, 技术科学, 2004, 卷号: 34, 期号: 0, 页码: 1
Authors:  陈俊;  张书明;  张宝顺;  朱建军;  冯淦;  段俐宏;  王玉田;  杨辉;  郑文琛
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Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2003, 卷号: 46, 期号: 6, 页码: 620-626
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Duan LH;  Wang YT;  Yang H;  Zheng WC;  Chen J,Sichuan Univ,Dept Mat Sci,Chengdu 610064,Peoples R China.
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Gallium Nitride  Mocvd  In Situ Laser Reflectometry  Chemical-vapor-deposition  In-situ  Sapphire Substrate  Nucleation Layers  Films  
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Shen XM;  Feng G;  Liu JP;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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In Situ Laser Reflectometry  Lateral Overgrowths  Surface Morphology  Metalorganic Chemical Vapor Deposition  Gan  Chemical-vapor-deposition  Light-emitting-diodes  Sapphire Substrate  Nucleation Layers  Quality  Temperature  
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Shen XM;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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In Situ Laser Reflectometry  Lateral Overgrowth  Metalorganic Chemical Vapor Deposition  Gan  Chemical-vapor-deposition  High-quality Gan  Buffer Layer  Threading Dislocations  Temperature  Evolution  Surface  Movpe  
Radiative transition in delta-doped GaAs superlattices 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 1999, 卷号: 18, 期号: 1, 页码: 89-92
Authors:  Cheng WC;  Xia JB;  Li GH;  Tan PH;  Zheng HZ;  Cheng WC,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Delta-doping  Superlattices  Si  Radiative Transition  Band-gap  
δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 6, 页码: 497
Authors:  程文超;  夏建白;  郑文硕;  黄醒良;  金载元;  林三镐;  瑞恩庆;  李亨宰
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δ掺杂GaAs超晶格的辐射跃迁 期刊论文
红外与毫米波学报, 1999, 卷号: 88, 期号: 0
Authors:  程文超;  夏建白;  李国华;  谭平恒;  郑厚植
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Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure 期刊论文
APPLIED PHYSICS LETTERS, 1998, 卷号: 72, 期号: 25, 页码: 3309-3311
Authors:  Ji Y;  Chen YZ;  Luo KJ;  Zheng HZ;  Li YX;  Li CF;  Cheng WC;  Yang FH;  Ji Y,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Quantum-well  Scattering  Electrons  Escape