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The second-order combination Raman modes of bilayer graphene in the range of 1800-2150 cm(-1) 期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 14, 页码: 147802
Authors:  Li, QQ;  Zhang, X;  Wu, JB;  Lu, Y;  Tan, PH;  Feng, ZH;  Li, J;  Wei, C;  Liu, QB
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Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 054513
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Feng ZH (Feng, Zhihong);  Meng LG (Meng, Lingguo);  Lv YJ (Lv, Yuanjie);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Wang ZG (Wang, Zhanguo)
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Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 434
Authors:  Lv YJ (Lv, Yuanjie);  Lin ZJ (Lin, Zhaojun);  Meng LG (Meng, Lingguo);  Luan CB (Luan, Chongbiao);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Feng ZH (Feng, Zhihong);  Wang ZG (Wang, Zhanguo)
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Photovoltaic effect of tin disulfide with nanocrystalline/amorphous blended phases 期刊论文
SOLID STATE COMMUNICATIONS, 2010, 卷号: 150, 期号: 1-2, 页码: 58-61
Authors:  Tan FR (Tan Furui);  Qu SC (Qu Shengchun);  Zeng XB (Zeng Xiangbo);  Zhang CS (Zhang Changsha);  Shi MJ (Shi Mingji);  Wang ZJ (Wang Zhijie);  Jin L (Jin Lan);  Bi Y (Bi Yu);  Cao J (Cao Jie);  Wang ZG (Wang, Zhanguo);  Hou YB (Hou Yanbing);  Teng F (Teng Feng);  Feng ZH (Feng, Zhihui);  Qu, SC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsc@semi.ac.cn
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Nanocrystalline  
二次退火制备I I I-V族半导体量子点 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 3, 页码: 747-750
Authors:  肖虎;  孟宪权;  朱振华;  金鹏;  刘峰奇;  王占国
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Synthesis of MDMO-PPV capped PbS quantum dots and their application to solar cells 期刊论文
POLYMER, 2008, 卷号: 49, 期号: 21, 页码: 4647-4651
Authors:  Wang, ZJ;  Qu, SC;  Zeng, XB;  Zhang, CS;  Shi, MJ;  Tan, FR;  Wang, ZG;  Liu, JP;  Hou, YB;  Teng, F;  Feng, ZH;  Qu, SC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsc@semi.ac.cn
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Hybrid Solar Cells  Polymer  Pbs Quantum Dots  
偏振不灵敏半导体光放大器的制作方法 专利
专利类型: 发明, 申请日期: 2005-05-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王书荣;  王圩;  刘志宏;  张瑞英;  朱洪亮;  王鲁蜂
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Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 1, 页码: Art.No.013104
Authors:  Gong Z;  Niu ZC;  Fang ZD;  Miao ZH;  Feng SL;  Niu, ZC, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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Molecular-beam Epitaxy  
Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5 mu m 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 274, 期号: 1-2, 页码: 78-84
Authors:  Gong Z;  Fang ZD;  Miao ZH;  Niu ZC;  Feng SL;  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912,Qinghua E Rd,Haidian Dist, Beijing 100083, Peoples R China. 电子邮箱地址: Zhgong@red.semi.ac.cn
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1.5 Mu m Light  
非晶硅太阳电池光照J-V特性的AMPS模拟 期刊论文
物理学报, 2005, 卷号: 54, 期号: 5, 页码: 2302-2306
Authors:  胡志华;  廖显伯;  刁宏伟;  夏朝凤;  许玲;  曾湘波;  郝会颖;  孙光临
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